Yonsei University

Won-Gi Kim

Hyun Jae Kim

Jeong Woo Park

Young Jun Tak

Jusung Chung

Tae Soo Jung

Heesoo Lee

Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300&#xb0; C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300&#xb0; C.

Growing community of inventors

Goyang-si, South Korea

Won-Gi Kim