Semes Co., Ltd.

Won Geun Kim

Tae Shin Kim

Ji Hoon Jeong

Young Dae Chung

Jee Young Lee

Pil Kyun Heo

Se Hoon Oh

Hyun Yoon

Do Yeon Kim

Jung Suk Goh

Hyun Goo Park

Ye Rim Yeon

Kuk Saeng Kim

Kwang Sup Kim

Young Je Um

Ho Jong Hwang

Ju Mi Lee

Do Youn Lim

Cheng Bin Cui

Yong Jun Seo

Byeong Geun Kim

Yoon Ki Sa

Choong Hyun Lee

Jae Seong Lee

Disclosed is a substrate treatment apparatus including a rotation unit that supports and rotates a substrate, a chemical discharge unit that discharges a chemical solution to the rotation unit, a chemical recovery unit disposed close to the rotation unit and configured to recover the chemical solution scattering from the rotation unit, and a laser irradiation unit that applies a laser beam to the substrate and heats the substrate.

Substrate treatment apparatus

Proposed is a substrate heating unit including: a laser generator providing a laser beam for heating a substrate; and a beam shaper processing the laser beam from the laser generator and selectively providing one of a first beam having a uniform energy distribution and a second beam having an edge-enhanced energy distribution to the substrate.

Substrate heating unit, substrate processing apparatus, and substrate processing method

Provided is a substrate treatment apparatus including a treatment container equipped with a conductive member. The conductive member is made of a material having a lower resistivity than that of the treatment container. The conductive member prevents a rise of an electric potential of the treatment container, which is caused by charging during treatment of a substrate, thereby preventing the substrate from being contaminated and damaged by particles and electrostatic arcing.

Substrate treatment apparatus and method of performing treatment process on substrate

A thin layer etching apparatus includes an etchant supply unit configured to supply an etchant onto a substrate to etch a thin layer formed on the substrate, a temperature measuring unit configured to measure a temperature of the substrate while an etching process is performed by the etchant, a laser irradiating unit configured to irradiate a first laser beam on a first portion including a central portion of the substrate and to irradiate a second laser beam in a ring shape on a second portion surrounding the first portion so that the temperature of the substrate is maintained at a predetermined temperature during the etching process, and a process control unit configured to control power of the first and second laser beams based on the temperature of the substrate measured by the temperature measuring unit to reduce a temperature difference between the first and second portions of the substrate.

Apparatus including laser heating for etching thin layer

A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.

Apparatus for and method of treating substrate

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Method and apparatus for etching thin layer

Growing community of inventors

Goyang-si, South Korea

Won Geun Kim