Samsung Display Co., Ltd.

Ensiltech Corporation

Ensil Tech Co., Ltd.

Other

Won-Eui Hong

Jae-Sang Ro

Oh-Seob Kwon

Seog-Young Lee

Sung-Soo Koh

Jung-Jun Im

Dong-Seop Park

Byung-Uk Han

Provided are a deposition substrate of a deposition apparatus, a method of forming a layer using the same, and a method of manufacturing an organic light emitting diode (OLED) display device. The method of forming a layer using the deposition substrate includes preparing a substrate, forming a heating conductive layer for Joule heating on the substrate, forming a first insulating layer on the heating conductive layer for Joule heating and including a groove or hole, forming a deposition material layer on a top surface of the first insulating layer having the groove or hole, and applying an electric field to the heating conductive layer for Joule heating to perform Joule-heating on the deposition material layer. Thus, the method is suitable for manufacturing a large-sized device.

Deposition substrate of deposition apparatus, method of forming layer using the same, and method of manufacturing organic light emitting diode display device

A mother substrate for forming flat panel display apparatuses and a method of manufacturing the same, the mother substrate including a substrate; a plurality of display units on the substrate, the display units being for forming a plurality of flat panel display apparatuses; a sealing substrate facing the display units; sealing members between the substrate and the sealing substrate, the sealing members surrounding each of the display units; a plurality of wiring units between the substrate and the sealing substrate, the wiring units overlapping the sealing members; a connecting unit including a conductive material, the connecting unit connecting adjacent wiring units in one direction and having a width that is greater than a width of each of the wiring units; and inlets connected to the plurality of wiring units and an external power source, the inlets being for applying a voltage to the plurality of wiring units.

Mother substrate for flat panel display apparatus and method of manufacturing the same

A flat panel display apparatus includes a substrate; a display unit disposed on the substrate; a sealing substrate disposed to face the display unit; a sealing member disposed between the substrate and the sealing substrate to surround the display unit; a wiring unit disposed between the substrate and the sealing substrate, including a region that overlaps the sealing member, and including a plurality of wiring members that are spaced apart from each other in at least a portion of the region that overlaps the sealing member; and a lead-in unit connected to the wiring unit to apply a voltage to the wiring unit, and formed to be electrically connectable to an external power source.

Flat panel display apparatus, mother substrate for flat panel display apparatuses, method of manufacturing the flat panel display apparatus, and method of manufacturing the mother substrate

Provided are thin film transistor, a method of fabricating the same, a flat panel display device including the same, and a method of fabricating the flat panel display device, that are capable of applying an electric field to a gate line to form a channel region of a semiconductor layer of a thin film transistor using a polysilicon layer crystallized by a high temperature heat generated by Joule heating of a conductive layer. As a result, a process can be simplified using a gate line included in the thin film transistor as the conductive layer, and the channel region of the semiconductor layer can be formed of polysilicon having a uniform degree of crystallinity. The thin film transistor includes a straight gate line disposed in one direction, a semiconductor layer crossing the gate line, and source and drain electrodes connected to source and drain regions of the semiconductor layer.

Method of fabricating thin film transistor having amorphous and polycrystalline silicon

In a flat panel display apparatus and a method of manufacturing the same, the flat panel display apparatus includes a substrate, a display unit disposed on the substrate, a sealing substrate disposed facing the display unit, a sealing member disposed between the substrate and the sealing substrate so as to surround the display unit, a wiring unit disposed between the substrate and the sealing substrate so as to partially overlap the sealing member, and at least three inlet portion groups to which voltage is applied via an external power source. The inlet portion groups are connected to the wiring unit. Each inlet portion group includes a plurality of sub-inlet portions.

Flat panel display apparatus and method for manufacturing the same

A flat panel display apparatus includes a first substrate having a display region, a second substrate facing the first substrate and bonded to the first substrate, a groove portion in an edge of at least one of the first substrate and the second substrate, and a wiring portion and a bonding member arranged in the groove portion. The bonding member contacts the wiring portion. The wiring portion is configured to receive power and to supply heat to the bonding member. The bonding member is configured to bond the first substrate and the second substrate using the heat supplied from the wiring portion disposed in the groove portion.

Flat panel display apparatus and mother substrate for flat panel display apparatus

An organic electroluminescence apparatus comprises: a substrate having a pixel region and sealing regions; an organic electroluminescence device located in the pixel region of the substrate; and a sealing substrate having a pixel region and sealing regions corresponding to the pixel region and the sealing regions of the substrate. The sealing regions of the sealing substrate comprise conductive layers continuously connected to each other. In a method of manufacturing organic electroluminescence apparatus by sealing the substrate and the sealing substrate using a glass frit, manufacturing costs and process time can be greatly reduced.

Sealing substrate, organic electroluminescence apparatus and method of fabricating the same

Provided is an apparatus for manufacturing a polysilicon thin film by depositing an amorphous silicon thin film and an upper silicon dioxide substrate on a lower silicon dioxide substrate, forming a conductive thin film on the upper silicon dioxide substrate, and applying an electric field and performing Joule heating to crystallize the amorphous silicon thin film, the apparatus comprising power terminals for elastically contacting both upper ends of the conductive thin film and supplying power to the conductive thin film, and support members for elastically supporting the substrate such that the power terminals closely contact both upper ends of the conductive thin film to form a uniform electric field at the conductive thin film. Therefore, it is possible to apply an electric field to a conductive thin film and perform Joule heating to crystallize an amorphous silicon thin film, and support members are installed at both lower surfaces of a silicon dioxide substrate to elastically support the silicon dioxide substrate such that power terminals closely contact both upper ends of the conductive thin film, thereby forming a uniform electric field at the conductive thin film to efficiently perform crystallization within a short time.

Apparatus for manufacturing polycrystalline silicon thin film

Disclosed herein is a rapid annealing method in a mixed structure composed of a heat treatment-requiring material, dielectric layer and conductive layer, comprising that during rapid annealing on a predetermined part of the heat treatment-requiring material, by instantaneously generated intense heat due to Joule heating by application of an electric field to the conductive layer, the potential difference between the heat treatment-requiring material and the conductive layer is set lower than the dielectric break-down voltage of the dielectric layer, thereby preventing generation of arc by dielectric breakdown of the dielectric layer during the annealing.

Method of preventing generation of arc during rapid annealing by joule heating

Disclosed is a method for annealing a silicon thin film in a substrate in which an insulation layer and the silicon thin film are subsequently formed. The method includes heating or preheating the silicon thin film within a temperature range at which the substrate is not transformed during the process so as to generate an intrinsic carrier therein, thereby lowering a resistance to a value at which Joule heating is possible; and applying an electric field to the preheated silicon thin film so as to induce Joule heating by means of movement of the carrier, thereby conducting crystallization, eliminating crystal defects, and ensuring crystal growth. When using the method, Joule heating is selectively induced to a-Si thin film, a-Si/Poly-Si thin film or a Poly-Si thin film according to the preheating condition, thereby making a Poly-Si thin film of good quality within a very short time without damaging the substrate.

Growing community of inventors

Seoul, South Korea

Won-Eui Hong