Skhynix Inc.

Won Duck Jung

Sung Mook Lim

Ju Il Eom

Sang Joon Lim

Sung Ho Hyun

Jong Ho Lee

In Chul Hwang

Han Jun Bae

Seung Jee Kim

Chong Ho Cho

Joo Hyun Kang

Hye Won Kim

A semiconductor package is configured to include a package substrate, a semiconductor chip disposed on the package substrate, and bonding wires. The package substrate includes a first column of bond fingers disposed in a first layer and a second column of bond fingers disposed in a second layer. The semiconductor chip includes a first column of chip pads arrayed in a first column and a second column of chip pads arrayed in a second column adjacent to the first column. The first column of chip pads are connected to the first column of bond fingers, respectively, through first bonding wires, and the second column of chip pads are connected to the second column of bond fingers, respectively, through second bonding wires.

Semiconductor packages

A semiconductor package includes a package substrate, a base module disposed on the package substrate and configured to include an intermediate chip, bonding wires connecting the intermediate chip to the package substrate, a lower-left chip disposed between the base module and the package substrate, and an upper-left chip disposed on the base module. The base module further includes an encapsulant encapsulating the intermediate chip, through vias electrically connected to the upper-left chip, and redistributed lines (RDLs) connecting the intermediate chip to the through vias and extending to provide connection parts which are spaced apart from the through vias and are connected to the lower-left chip.

Semiconductor packages including chips stacked on a base module

A planar dual die package includes a package substrate and first and second semiconductor dice disposed side by side on a first surface of the package substrate. Outer connectors are disposed on a second surface of the package substrate, and the second surface of the package substrate includes a command/address ball region and a data ball region. Each of the first and second semiconductor dice includes die pads disposed in a command/address pad region corresponding to the command/address ball region and in a data pad region corresponding to the data ball region. Each of the first and second semiconductor dice are disposed on the package substrate so that a first direction from the command/address ball region toward the data ball region coincides with a second direction from the command/address pad region toward the data pad region.

A package substrate includes a core layer including a first surface and a second surface, which are opposite to each other. The package substrate also includes a power plane interconnection layer disposed on the first surface of the core layer and a ground plane interconnection layer disposed on the second surface of the core layer. The package substrate additionally includes an electromagnetic (EM) bandgap structure disposed in the core layer and electrically coupled between the power plane interconnection layer and the ground plane interconnection layer. The EM bandgap structure includes an EM bandgap via protruding from a portion of the power plane interconnection layer toward the ground plane interconnection layer. The EM bandgap structure further includes an EM bandgap cylindrical structure extending from a portion of the ground plane interconnection layer toward the power plane interconnection layer and surrounding a side surface of the EM bandgap via.

Package substrates having an electromagnetic bandgap structure and semiconductor packages employing the package substrates

Disclosed is a semiconductor package. The semiconductor package may include a substrate a semiconductor chip mounted over a surface of the substrate such that an active surface of the semiconductor chip faces the surface of the substrate. The semiconductor chip and substrate may be configured for shielding or scattering electromagnetic waves.

Semiconductor package having an electro-magnetic interference  shielding or electro-magnetic wave scattering structure

Semiconductor package having an electro-magnetic interference shielding or electro-magnetic wave scattering structure

A semiconductor package may include a first substrate including a first connection portion disposed on a surface of the first substrate and a second substrate including a second connection portion disposed on a surface of the second substrate. The second substrate may be disposed over the first substrate and the second connection portion facing the first connection portion. A first connection loop portion may be provided to include an end connected to the first connection portion. A second connection loop portion may be provided to include one end connected to the second connection portion and the other end combined with the first connection loop portion.

Semiconductor packages having interconnection members

A semiconductor device includes a substrate, an elastic buffer layer disposed on a surface of the substrate, wiring patterns disposed on a first surface of the elastic buffer layer, and a semiconductor chip disposed on a second surface of the elastic buffer layer facing away from the first surface of the elastic buffer layer. The semiconductor chip includes trenches formed on a surface facing the elastic buffer layer. Interconnection members are disposed to electrically connect the elastic buffer layer to the substrate. Each of the interconnection members has one end electrically connected to one of the wiring patterns and the other end electrically connected to the substrate.

Semiconductor package

A package substrate includes a core layer, first external interconnection lines on a top surface of the core layer, and internal interconnection lines. The first external interconnection lines include a first outermost external interconnection line on an edge of the core layer, and the internal interconnection lines include an outermost internal interconnection line in the edge of the core layer. A first bonding pad is disposed on the first outermost external interconnection line and exposed in a first bonding region of the core layer. A second bonding pad is disposed on the outermost internal interconnection line and exposed in a second bonding region of the core layer. The first bonding region is spaced apart from a chip attachment region by a first distance, and the second bonding region is spaced apart from the chip attachment region by a second distance greater than the first distance.

Growing community of inventors

Icheon-si, South Korea

Won Duck Jung