Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Won Chul Lee

Ye Ram Kim

Jae Hong Park

Jun Ho Yoon

Chan Hoon Park

Je Woo Han

Sung Yeon Kim

Yong Moon Jang

Ji Ung Pak

Dong Jin Park

Moo Sung Kim

Taek Sun Shin

Byoung Jin Jin

Jong Hyeon Choi

Jung Gil Oh

Jin Gyu Sim

Yu Bin Kim

Kwang Sun You

Mun Seop Lim

A storage system includes a storage device and an overlap checker. The overlap checker receives I/O commands of the storage device, extracts characteristics of the received I/O commands, issues a first merge command including N first I/O commands among the I/O commands in response to the extracted characteristics, wherein 'N' is a natural number greater than 1. And each of the first I/O commands instructs operation on a position corresponding to an offset in a region of the storage device corresponding to a logical address, wherein the characteristics of the I/O commands include the logical address and the offset.

Storage system and operating method for same

A curved display device may include a display panel and a chassis member. The display panel may include a first edge and a second edge. The first edge may be longer than the second edge and may be convex in a back direction. The second edge may be convex in an image-displaying direction. The back direction and the image-displaying direction may be with reference to the display panel. The chassis member may be coupled to the display panel and may support the display panel.

Curved display device

A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri region more adjacent to the second region than adjacent to the first region, first and second lower electrodes disposed in the first and second regions, respectively, first and second lower support patterns disposed on outer walls of the first and second lower electrodes, respectively, an upper support pattern disposed on outer walls of the first and second lower electrodes, and being on and spaced apart from the first and second lower support patterns, a dielectric layer disposed on surfaces of the first and second lower electrodes, the first and second lower support patterns, and the upper support pattern, and an upper electrode disposed on a surface of the dielectric layer, wherein thickness of the first lower support pattern is smaller than thickness of the second lower support pattern.

Semiconductor device and method for fabricating the same

A semiconductor device and method of manufacturing are provided. The semiconductor device includes a substrate; first and second structures spaced apart from each other on the substrate in a first direction, the first structure including a first lower electrode and the second structure including a second lower electrode; a first supporter pattern disposed on the substrate to support the first and second structures, and including a first region that exposes portions of sidewalls of the first and second structures, and a second region that covers a second portion of the sidewalls; and a second supporter pattern disposed on the first supporter pattern to support the first and second structures, the second supporter pattern including a third region, the third region configured to expose portions of the first sidewall and the second sidewall, and a fourth region that covers a portion of the first and second sidewalls.

Semiconductor device

Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Method of fabricating semiconductor devices

A backlight unit includes a light guide plate (LGP), a housing that receives the LGP, and a first LGP guide member coupled to the housing. The housing includes a bottom surface, a first sidewall, and a second sidewall. The first and second sidewalls are connected to edges of the bottom surface, are disposed adjacent to each other, and are spaced apart from each other. A first corner of the bottom surface is disposed between the first and second sidewalls, and the first LGP guide member is disposed in a gap between the first and second sidewalls.

Backlight unit and display device including the same

A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate and are repeatedly arranged in a first direction and in a second direction that crosses the first direction, and a first electrode support contacting a sidewall of at least one of the lower electrodes. The first electrode support includes a first support region including a first opening and a second support region disposed at a border of the first support region. An outer sidewall of the first electrode support includes a first sidewall extending in the first direction, a second sidewall extending in the second direction, and a connecting sidewall connecting the first and second sidewalls. The second support region includes the connecting sidewall. In a first portion of the second support region, a width of the first portion of the second support region decreases in a direction away from the first support region.

A method of operating a memory controller includes; counting a number of read operations directed to a page-group of data stored in a block and generating a first read count number, then comparing the first read count number with a first reference count threshold among a first set of reference count thresholds associated with the page-group, and upon determining that the first read count number exceeds the first reference count threshold, performing a copy-back operation of the page-group data from the block to another block.

Growing community of inventors

Seongnam-si, South Korea

Won Chul Lee