Amkor Technology, Inc.

Amkor Technology Singapore Holding Pte. Ltd.

Won Chul Do

Jong Sik Paek

Doo Hyun Park

Ronald Patrick Huemoeller

David Jon Hiner

Michael G Kelly

Ji Hun Lee

Jin Young Khim

Yong Jae Ko

Seong Min Seo

Ji Hun Yi

Ji Yeon Ryu

Jae Hun Bae

Min Hwa Chang

Young Rae Kim

Dong Hyun Kim

Do Hyung Kim

In Bae Park

Sung Jae Oh

Seung Nam Son

Eun Ho Park

Sang Hyoun Lee

Eun Sook Sohn

Ah Ra Jo

Seok Geun Ahn

Curtis Michael Zwenger

Jin Han Kim

Jun Hwan Park

Jae Hun Ku

Dong Jin Kim

Young Suk Chung

Min Kyun Yoo

Byung Hoon Ahn

Hyun Cho

Pil Je Sung

Sung Sik Jang

Won Myoung Ki

Jin Hee Park

Suk Gu Ko

Won Geol Lee

Dong Hoon Han

Young Nam Choi

Glenn A Rinne

Tae Yong Lee

Yong Min Song

Ron Huemoeller

Yi Seul Han

Shaun Bowers

Jae Beom Shim

Wang Gu Lee

Mi Kyeong Choi

Tae Ki Kim

Jin Ryang Hwang

Yeon Seung Jung

Chang Min Lee

Seung Chul Han

Seo Yeon Ahn

Sung Geun Kang

In Su Mok

Suresh Jayaraman

SungGeun Kang

Ju Hong Shin

Seung Ju Lee

Kwang Eung Lee

Jae Yoon Kim

Kye Ryung Kim

Joo Hyun Kim

A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Semiconductor device and manufacturing method thereof

In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.

Semiconductor devices and methods of manufacturing semiconductor devices

In one example, a semiconductor device comprises a redistribution layer (RDL) substrate having a top surface and a bottom surface, wherein the RDL substrate comprises a filler-free dielectric material, an electronic device on the top surface of the RDL substrate, an electrical interconnect on the bottom surface of the RDL substrate and electrically coupled to the electronic device, a first protective material contacting a side surface of the electronic device and the top surface of the RDL substrate, and a second protective material contacting a side surface of the electrical interconnect and the bottom surface of the RDL substrate. Other examples and related methods are also disclosed herein.

Device chip scale package including a protective layer and method of manufacturing a device chip scale package

Methods and systems for a semiconductor device package with a die to interposer wafer first bond are disclosed and may include bonding a plurality of semiconductor die comprising electronic devices to an interposer wafer, and applying an underfill material between the die and the interposer wafer. Methods and systems for a semiconductor device package with a die-to-packing substrate first bond are disclosed and may include bonding a first semiconductor die to a packaging substrate, applying an underfill material between the first semiconductor die and the packaging substrate, and bonding one or more additional die to the first semiconductor die. Methods and systems for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die.

Semiconductor device package and manufacturing method thereof

In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.

Device chip scale package including a protective layer

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Various aspects of this disclosure provide a semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising a stacked die structure and a method of manufacturing thereof.

Semiconductor device and method of manufacturing thereof

In one example, a semiconductor device, comprises a first redistribution layer (RDL) substrate comprising a first dielectric structure and a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers, an electronic component over the first RDL substrate, wherein the electronic component is coupled with the first conductive structure, a body over a top side of the first RDL substrate, wherein the electronic component is in the body, a second RDL substrate comprising a second dielectric structure over the body, and a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers, and an internal interconnect coupled between the first conductive structure and the second conductive structure. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device can comprise a unit substrate comprising a unit conductive structure and a unit dielectric structure, and an electronic component coupled to the unit conductive structure. The unit substrate can comprise a portion of a singulated subpanel substrate of a panel substrate. Other examples and related methods are also disclosed herein.

A semiconductor package structure and a method for making a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a connect die that routes electrical signals between a plurality of other semiconductor die.

Semiconductor package and fabricating method thereof

Growing community of inventors

Bucheon-si, South Korea

Won Chul Do