Korea Institute of Energy Research

Won Chul Cho

Jae Goo Lee

Myung Won Seo

Jong Won Kim

Sang Jun Yoon

Kyoung-Soo Kang

Hyun Seok Cho

Tae Young Mun

Ki Kwang Bae

Hai In Lee

Chu Sik Park

Ho Won Ra

Hae In Lee

Seong Uk Jeong

Chang Hee Kim

A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.

Manufacturing method of silicon carbide and silicon carbide manufactured using the same

A method of preparing silicon using silica includes placing silica in a reaction chamber; adding a reducing agent into the reaction chamber; feeding a material for impact into the reaction chamber and sealing the reaction chamber; and reducing the silica to silicon by allowing the material for impact to generate a physical impact inside the reaction chamber. The preparation method of silicon using silica does not employ a high-temperature high-pressure process and provides a preparation method of silicon by which the porous structure of the silica before a reduction reaction is maintained within the silicon even after the reaction.

Method for manufacturing silicon using silica and silicon manufactured using the same

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Daejeon, South Korea

Won Chul Cho