Samsung Electronics Co., Ltd.

Plasmart Co., Ltd.

Won-Bong Jung

Yong-Hoon Son

Kyung-Hyun Kim

Phil-Ouk Nam

Yeon-Sil Sohn

Jin-I Lee

Bum-Soo Kim

Seung-Pil Chung

Kyoung-Sub Shin

Sung-Soo Ahn

Kwang-Chul Park

Hyun-Sung Kim

O Ik Kwon

Byeong-Ju Kim

Min-Kyung Yun

Kohji Kanamori

Han-Mei Choi

Young-Woo Park

Chang-seok Kang

Jae-Duk Lee

Sae-Hoon Uhm

Jong-Heun Lim

Jong-won Kim

Sang-Won Lee

Yong-kwan Lee

Cha-Dong Yeo

Kwang Chul Park

Dong-Seok Lee

A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a vertical direction with respect to a top surface of the substrate, a plurality of non-metal gate patterns surrounding the channels and being stacked on top of each other and spaced apart from each other along the vertical direction, and a plurality of metal gate patterns stacked on top of each other. The metal gate patterns are spaced apart from each other along the vertical direction. Each of the metal gate patterns surrounds a corresponding one of the non-metal gate patterns.

Vertical memory devices and methods of manufacturing the same

A vertical memory device includes a substrate, a channel on the substrate, extending in a vertical direction with respect to a top surface of the substrate, and including a protrusion at a lower portion of the channel, the protrusion extending in a parallel direction with respect to the top surface of the substrate, a semiconductor pattern connecting the protrusion and the substrate, and gate lines stacked and spaced apart from each other in the vertical direction, the gate lines on the protrusion and the semiconductor pattern and surrounding the channel.

Vertical memory devices

A nonvolatile memory device includes a conductive line disposed on a substrate and vertically extended from the substrate, a first channel layer disposed on the substrate and vertically extended from the substrate, wherein the first channel layer is spaced apart from the conductive line, a second channel layer vertically extended from the substrate, wherein the second channel layer is disposed between the first channel layer and the conductive line, a first gate electrode disposed between the conductive line and the second channel layer, wherein the first gate electrode includes a first portion having a first thickness and a second portion having a second thickness that is different from the first thickness, and a second gate electrode disposed between the first channel layer and the second channel layer, wherein the second gate electrode has the second thickness.

Nonvolatile memory device and a method for fabricating the same

A method of manufacturing a semiconductor device, the method including forming a tunnel insulating layer on an upper surface of a substrate, forming gate patterns on an upper surface of the tunnel insulating layer, forming capping layer patterns on sidewalls of the gate patterns and on the upper surface of the tunnel insulating layer, etching a portion of the tunnel insulating layer that is not covered with the gate patterns or the capping layer patterns to form a tunnel insulating layer pattern, and forming a first insulating layer on the upper surface of the substrate to cover the gate patterns, the capping layer patterns, and the tunnel insulating layer pattern, wherein the first insulating layer has an air gap between the capping layer patterns.

Semiconductor devices

Semiconductor devices and methods of manufacturing the semiconductor devices

An inductively coupled plasma generator having a lower aspect ratio reaction gas, comprising a chamber having a gas inlet through which a reaction gas is supplied, a vacuum pump for maintaining the inside of the chamber vacuum and a gas outlet for exhausting the reaction gas after completion of the reaction, a chuck for mounting a target material to be processed inside the chamber, and an antenna to which high-frequency power is applied, the antenna provided at the upper and lateral portions of the chamber, wherein the antenna has parallel antenna elements in which a discharge of a high frequency can be allowed and impedance is low to ensure a low electron temperature, the antenna is disposed such that a powered end of each of the antenna elements and a ground end of each of the antenna elements opposite to the powered end are symmetrical in view of the center of an imaginary circle formed by the antenna to establish rotation symmetry of plasma density profiles, the antenna elements are twisted in a helical manner, and the powered end of each of the antenna elements is positioned to be far from the chamber and the ground end of each of the antenna elements is positioned to be close to the chamber, thereby compensating for a drop in the plasma density due to ion loss occurring at the powered end.

Inductively coupled plasma generator having low aspect ratio

Growing community of inventors

Seoul, South Korea

Won-Bong Jung