Sungkyunkwan University

Global Frontier Center for Multiscale Energy Systems

Won Bin Kim

Hyun Suk Jung

Jae Myeong Lee

SangMyeong Lee

Jun Young Kim

Jin Hyuk Choi

Dong Geon Lee

Byeong Jo Kim

Sang Myeong Lee

So Yeon Park

Min Hee Kim

Han Gil Sang

Jung Hyun Suk

Gi Joo Bang

Ohyeong Gong

Oh Young Gong

Miyeon Baek

ChangHwun Sohn

Oh Yeong Gong

Jae Bum Jeon

Ji Hyun Baek

A resistance random access memory device includes a resistance change layer, including an organometallic halide having perovskite grains, disposed on a first electrode; and a second electrode disposed on the resistance change layer. A boundary between the perovskite grains comprises an amorphous metal oxide.

Resistance random access memory device and method for manufacturing same

A resistance access memory device includes a first electrode, a resistance change layer, formed on the first electrode, comprising a thin film containing BiXand and BiX, and a second electrode formed on the resistance change layer, where Xis a halogen element selected from the group consisting of F, Cl, Br, I, and combinations thereof, Xis a chalcogen element selected from the group consisting of S, Se, Te, and combinations thereof, and x is a real number of 0 or more and less than 3.

Resistance access memory device and fabricating method of the same

Beverage can

The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIBrthin film (where 0&#x2264;x&#x2264;3) and/or a CsAgBiBrIthin film (where 0&#x2264;x&#x2264;6) having an elpasolite structure.

Resistance random access memory device and fabricating method of the same

The present disclosure relates to a resistive random access memory device and a preparing method thereof.

Resistive random access memory device comprising metal halide and method for preparing the same

The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Resistance random access memory device and preparing method thereof

Growing community of inventors

Suwon-si, South Korea

Won Bin Kim