Applied Materials, Inc.

Massachusetts Institute of Technology

Won B Bang

Yen-Kun Victor Wang

Chen-An Chen

Ellie Y Yieh

Toan Q Tran

Nitin K Ingle

Michael John Cima

Emanuel Michael Sachs

Rong Pan

Thanh Ngoc Pham

Vikash Banthia

Kirby Hane Floyd

Xinyun Xia

Adrian Q Montgomery

Jennifer Gonzales

Amna Mohammed

Shan Wong

Srinivas D Nemani

Shankar Venkataraman

Visweswaren Sivaramakrishnan

Zheng Yuan

Steve G Ghanayem

Lawrence Chung-Lai Lei

Siqing Lu

Phong Pham

Francimar Campana

Ajay Bhatnagar

Dong Hyung Lee

Jang Seok Oh

Steven E Gianoulakis

Kevin Mukai

Lun Tsuei

David Sun

Yen Kun Wang

Yeh Jen Kao

Srivivas D Nemani

Matthew W Losey

Sundar Pichai

Estela Guijosa

Dimitry Lubormirsky

Yen-Kung Victor Wang

Daniel S Herkalo

Jin Ho Lee

Theresa Marie O Liu

Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. A sealing member seals the opening when a door is in a closed position. To selectively open and close the opening, an actuator moves the door. A valve actuator switch provides a first or second pressure to the actuator depending on the pressure inside a first chamber. In one embodiment, a sensor monitors the pressure inside the first chamber.

Variable seal pressure slit valve doors for semiconductor manufacturing equipment

Embodiments of a valve assembly for a process chamber having improved seal performance are provided herein. In some embodiments, a valve assembly for a process chamber includes a housing having an opening disposed in a wall thereof and through which a substrate may be transferred; a door movably coupled to the housing in a plane substantially parallel to the wall of the housing for selectively sealing the opening; a compressible sealing member disposed at least partly between an upper surface of the door and a corresponding surface of the housing for forming a seal therebetween by compression of the compressible sealing member in a direction substantially perpendicular to the wall when the door is in a closed position; and a mechanism for restricting the exposure of the compressible sealing member to an environment on a process chamber side of the housing.

Slit valve

A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.

Dual top gas feed through distributor for high density plasma chamber

A method of adjusting a spacing between a gas distribution member and a substrate support includes forming a layer on a substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate. The method further comprises computing spacing adjustment amounts for the remaining locations relative to the reference location based on the differences in thickness between the reference location and the remaining locations.

Adjusting a spacing between a gas distribution member and a substrate support

Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.

Gas baffle and distributor for semiconductor processing chamber

A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

Gap-fill depositions in the formation of silicon containing dielectric materials

Embodiments of the present invention are directed to adjusting the spacing between the substrate support and the faceplate of the gas distribution member to achieve improved uniformity of the layer formed on the substrate. One embodiment of the present invention is directed to a method of adjusting a spacing between a gas distribution member and a substrate support disposed generally opposite from the gas distribution member, wherein the substrate support is configured to support a substrate on which to form a layer with improved thickness uniformity. The method comprises forming a layer on the substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate. The method further comprises computing spacing adjustment amounts for the remaining locations relative to the reference location based on the differences in thickness between the reference location and the remaining locations. The spacing adjustment amount is positive to increase the spacing between the substrate support at the location and the gas distribution member if the thickness is greater at the location than at the reference location. The spacing adjustment amount is negative to decrease the spacing between the substrate support at the location if the thickness is smaller at the location than at the reference location.

In situ substrate holder leveling method and apparatus

A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials

Embodiments of the present invention provide an apparatus for constraining and supporting the lift pins to prevent or minimize lateral movement of the lift pins that causes substrate hand-off problems and associated degradation in substrate processing characteristics and results. In one embodiment, a lift pin assembly for manipulating a substrate above a support surface of a substrate support comprises a plurality of lift pins movable between an up position and a down position. The lift pins include top ends and bottom ends. The top ends are configured to be lifted above the support surface of the substrate support to contact a bottom surface of the substrate in the up position. The top ends are configured to be positioned at or below the support surface of the substrate support in the down position. A lift pin connecting member is attached to the plurality of lift pins at attachment locations at or near the bottom ends of the lift pins to maintain fixed relative distances between the lift pins at the attachment locations and to move with the lift pins between the up position and the down position.

Lift pin assembly for substrate processing

A method of operating a substrate processing chamber comprising transferring a first substrate into the substrate processing chamber and heating the substrate to a first temperature of at least 510&#xb0; C.; depositing an insulating layer over the first substrate while reducing the temperature of the substrate from the first temperature to a second temperature that is lower than the first temperature; transferring the first substrate out of the substrate processing chamber; removing unwanted deposition material formed on interior surfaces of the chamber during the depositing step by introducing reactive halogen species into the chamber while increasing the temperature of chamber; transferring a second substrate into the substrate processing chamber and heating the substrate to the first temperature; and depositing an insulating layer over the second substrate while reducing the temperature of the substrate from the first temperature to the second temperature.

Ramp temperature techniques for improved mean wafer before clean

Processing gases reactive with each other are provided in parallel to a processing chamber through separate delivery lines including mass flow controllers devoted to each line. The parallel delivery lines meet in a mixing manifold located proximate to the processing chamber and relatively far downstream from the mass flow controllers and other flow-constricting components of the gas delivery system. The continuous high flow of gas provided by the devoted mass flow controllers may maintain a sufficiently high pressures on the delivery lines to prevent partial clogging from leading to a further drop in pressure and complete obstruction of the delivery line.

Clog-resistant gas delivery system

Apparatus and method for delivering processing gas are provided. The apparatus for delivering processing gas from a vaporizer to a processing system comprises: a valve connected between the vaporizer and the processing system, the valve having a valve input connected to a vaporizer output and a first valve output connected to a processing system input and a second valve output connected to a bypass line; and a controller for switching the valve between the first valve output and the second valve output. The apparatus may further comprise: a second valve connected between a carrier gas source, a divert gas source and the vaporizer, the second valve having a first valve input connected to the carrier gas source, a second valve input connected to the divert gas source, and a valve output connected to a vaporizer input.

Concentration profile on demand gas delivery system (individual divert delivery system)

An injection valve is provided with vibration to dislodge residue therefrom and to thus avoid injection valve clogging. A wave generator which preferably generates an ultrasonic sine wave, is operatively coupled to the vaporization region of the injection valve (i.e., via the injection block, via a piezoelectric valve controller, etc.). The wave may be applied to the injection valve whenever vaporization takes place, in which case a removable trap is coupled between the injection valve and the processing chamber. Alternatively, the sonic wave may be applied to the injection valve only in conjunction with a chamber cleaning process.

Clog resistant injection valve

Molds for casting with customized internal structure to collapse upon cooling and to facilitate control of heat transfer

A new mold solves problems that arise from differential changes in geometry inherent to casting metal in a ceramic mold, by control of the internal morphology between the surfaces of the mold that face the casting, and that face the external environment. Layered fabrication techniques are used to create a ceramic mold. For example, an internal geometry composed of a cellular arrangement of voids may be created within the mold wall. Structures may be designed and fabricated so that the ceramic mold fails at an appropriate time during the solidification and/or cooling of the casting. Thus, the casting itself is not damaged. The mold fails to avoid rupture, or even distortion, of the casting. A thin shell of ceramic defines the casting cavity. This shell must be thin enough to fail due to the stresses induced (primarily compressive) by the metal next to it and partly adherent to it. A support structure is provided with a morphology that supports the thin shell that defines the casting geometry, yet that also fails as the casting solidifies and/or cools. Typically, the support structure is a skeletal network with voids therebetween. The skeletal elements may be struts, or sheets or both. At least the following two failure mechanisms may be exploited in the design of the support structure: bending in the structure; and under compressive loads, either by buckling of a support member or, breakage under compressive loading. The failure of the support structure may also be due to a combination of bending and compression.

Growing community of inventors

Santa Clara, CA, United States of America

Won B Bang