Ovonyx Inc.

Wolodymyr Czubatyi

Tyler A Lowrey

Stanford R Ovshinsky

Sergey A Kostylev

Patrick K Klersy

Boil Pashmakov

Ed Spall

A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom composite electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer and the bottom composite electrode, and a top electrode layer deposited over the active material layer. The device uses a chemical or electrochemical liquid phase deposition process to selectively and conformally fill the insulative layer opening with the conductive bottom composite electrode layer. Conformally filling the conductive material within the opening reduces structural irregularities within the opening thereby increasing material density and resistivity within the device and thereby improving device performance and reducing programming current.

Liquid phase deposition of contacts in programmable resistance and switching devices

An electrically operated memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contact being a thin-film layer having a sidewall electrical coupled to the memory material.

Electrically programmable memory element with improved contacts

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Warren, MI, United States of America

Wolodymyr Czubatyi