Allegis Technologies, Inc.

Lg Electronics Inc.

Oriol Inc.

Wolfram Urbanek

Myung Cheol Yoo

Geun-Young Yeom

Kyong-Nam Kim

Youn-joon Sung

Chang-hyun Jeong

Dong-woo Kim

Youn-Joon Sung

Dong-Woo Kim

A method for fabricating an LED that radiates white spectrum light. A phosphor that radiates a white spectrum after excitation in the blue or UV spectrum is uniformly deposited onto a GaN epitaxial wafer prior to die separation and packaging. This allows wafer-level processing and probing of white LEDs and produces true white LED chips.

Methods of fabricating light emitting diodes that radiate white light

A method for improving thermal dissipation in large gallium nitride light emitting diodes includes replacing sapphire with a better thermal conductor resulting in more efficient removal of thermal energy. A method for achieving a reliable and strong temporary bond between a GaN epitaxial layer and a support wafer. A method for transferring an epitaxial film from a growth substrate to a secondary substrate. An excimer laser initiates film delamination from the growth substrate. The laser beam is shaped by a shadow mask and aligned to an existing pattern in the growth substrate. A method for fabricating a LED that radiates white spectrum light. A phosphor that radiates a white spectrum after excitation in the blue or UV spectrum onto the GaN epitaxial wafer prior to die separation and packaging. A method for depositing a metal substrate onto a GaN epitaxy layer.

Methods of processing of gallium nitride

Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCland/or BCl/Clgas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCland/or BCl/Clgas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.

Method of etching substrates

Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl and/or BCl /Cl gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl and/or BCl /Cl gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.

Growing community of inventors

San Jose, CA, United States of America

Wolfram Urbanek