Siltectra Gmbh

Nxp B.v.

Systemonic Ag

Other

Wolfram Drescher

Jan Richter

Christian Beyer

Lukas Lichtensteiger

Marko Swoboda

Ralf Rieske

Franz Schilling

Uwe Porst

Volker Aue

Gerhard P Fettweis

A solid body is disclosed. The solid body includes: a detachment plane in an interior space of the solid body, the detachment plane including laser radiation-induced modifications; and a region including layers and/or components. A multi-component arrangement is also disclosed. The multi-component arrangement includes: a solid-body layer including more than 50% SiC and modifications or modification components generating pressure tensions in a region of a first surface, the modifications being amorphized components of the solid-body layer, the modifications being spaced closer to the first surface than to a second surface opposite the first surface, the first surface being essentially level; and a metal layer on the first surface of the solid-body layer.

Solid body and multi-component arrangement

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

Method for producing a layer of solid material

A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

Method of treating a solid layer bonded to a carrier substrate

Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane () along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane () along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.

Method for separating thin layers of solid material from a solid body

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and subjecting the polymer layer to temperature conditions to generate mechanical stress in the solid body, including cooling of the polymer layer to a temperature below ambient temperature, the cooling taking place such that due to stresses a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

Wafer production method

The present invention relates to a method for separating at least one solid-body layer () from at least one solid body (). Thereby, the method as claimed in the invention comprises the steps:

Method for thinning solid body layers provided with components

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate () for removing a solid layer (), in particular a wafer; producing modifications (), in particular by means of laser beams (), in the donor substrate () in order to specify a crack course; providing a carrier substrate () for holding the solid layer (); bonding the carrier substrate () to the donor substrate () by means of a bonding layer (), wherein the carrier substrate () is provided for increasing the mechanical strength of the solid layer () for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer () on the carrier substrate (); thermally loading the stress-producing layer () in order to produce stresses in the donor substrate (), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer () from the donor substrate () such that the solid layer () is removed together with the bonded carrier substrate ().

Method for the material-saving production of wafers and processing of wafers

A method of splitting a semiconductor wafer includes: inducing a first stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a first radiation process; inducing a second stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a second radiation process, the second radiation process including applying laser energy to an edge of the semiconductor wafer; and splitting the semiconductor wafer after inducing the first stress distribution and the second stress distribution.

Method of producing stresses in a semiconductor wafer

A method for the production of layers of solid material is contemplated. The method may include the steps of providing a solid body for the separation of at least one layer of solid material, generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer disposed on the solid body in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the layer of solid material from the solid body.

Combined wafer production method with laser treatment and temperature-induced stresses

The present invention relates to a method for the production of layers of solid material, in particular for use as wafers. The method may include the following steps: providing a workpiece for the separation of the layers of solid material with the workpiece optionally having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material having the carrier unit optionally having a receiving layer for holding the layer of solid material, attaching the receiving layer to the exposed surface of the workpiece forming a composite structure, producing a break initiation point by means of pre-defined local stress induction in the peripheral region, including at the edge, of the workpiece, and separating the layer of solid material from the workpiece starting from the break initiation point.

Method and device for the production of wafers with a pre-defined break initiation point

The overall yield of a splitting method for division of a solid-state starting material into at least two solid-state pieces is increased by use of a polymer hybrid material comprising one or more fillers in a polymer matrix. A corresponding splitting method comprises the steps of providing the solid-state starting material with at least one exposed surface, applying a polymer hybrid material comprising fillers in a polymer matrix to at least one exposed surface of the solid-state starting material, so as to result in a composite structure, and subjecting the composite structure to a stress field such that the solid-state starting material is split along a plane within the solid-state starting material into at least two solid-state pieces.

Splitting method and use of a material in a splitting method

A method for producing layers of solid material is contemplated. The production method may include the following: Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.

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Dresden, Germany

Wolfram Drescher