Daimler-benz Ag

Infineon Technologies Ag

Daimler Chrysler Ag

Wolfgang Wondrak

Raban Held

Robert Plikat

Dieter Silber

Nando Kaminski

Horst Neubrand

Scott T Sheppard

Gerhard Pensl

Vera Lauer

Erhard Stein

The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconductor body at least over regions thereof has a lateral three-dimensional structure which has vertical recesses in the semiconductor body within which there are electrical conductors which are smaller than in the intervening spaces of the semiconductor body between the recesses, as well as a method for making and of using the semiconductor component.

High-voltage semiconductor component, method for the production and use thereof

A semiconductor component having impurity atoms introduced by implantation which are subsequently electrically activated by way of an annealing process. Immediately after the annealing process, the component has a mean surface roughness of less than 15 nm and at least 10% of the implanted impurity atoms are electrically activated.

Semiconductor component with foreign atoms introduced by ion implantation and process for producing the same

Semiconductor component with embedded fixed charges to provide increased

Semiconductor structure having one or more lateral, high-blocking

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Frankfurt am Main, Germany

Wolfgang Wondrak