Other

Siltronic Ag

Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik

Ihp Gmbh - Innovations for High Performance Microelectronics

Wacker Siltronic Gesellschaft F&uuml;r Halbleiter Materialien Ag

Wacker Siltronic Gesellschaft F{dot Over (u)}r Halbleitermaterialien Ag

Wolfgang Winkler

Guido Wenski

Thomas Altmann

Gerhard Heier

Karl-Ernst Ehwald

Dieter Knoll

Ernst Feuchtinger

Willibald Bernwinkler

Bernd Heinemann

Rudolf Ehwald

Dirk Wolansky

Katrin Schulz

Mario Birkholz

Philip Kulse

Gunther Kann

Marlen Frohlich

Egbert Matthus

Ulrich Haak

Dieter Genschow

Henning Zinke

Micro-electromechanical device for measuring the viscosity of a fluid, comprises a measuring chamber with a micromechanical actuator, arranged as a cantilever above a metallically conductive counter electrode, elastically deformable towards the counter electrode, surrounded by the fluid to be measured and made of a metallically conductive material, a two-terminal RF voltage source that can be switched off, having a first output terminal connected to the actuator, and a second output terminal connected to the counter electrode, and which is designed to output an RF voltage signal that is suitable for deflecting the actuator out of its rest position, and a measuring device to detect a change in the frequency, amplitude or phase of the RF signal in order to determine a measurement value for the viscosity-dependent speed at which the actuator is deformed.

MEMS-microviscometer

An apparatus for measuring the viscosity of a fluid having a first rigid member extending from a body of semiconductor material and provided with a first conductive path and a second resiliently flexible member provided with a second conductive path and arranged in cantilever fashion over the rigid member. At least one of the conductive paths may be selectively energized to brig about relative movement between the rigid and flexible member. Subsequent deenergization of the path causes the resiliently flexible member to return to its initial position, the rate of return being measured to derive a signal representative of the viscosity. Also described are methods of carrying out the measurement and of fabricating the apparatus.

Method and apparatus for measuring viscosity

A CMOS-compatible DMOS transistor can be designed by virtue of a suitable layout configuration optionally for very high drain voltages or for power amplification at very high frequencies and which can be produced at a low level of additional cost in comparison with a conventional sub-&#x3bc;m production technology for CMOS circuits. A gate insulator of the transistor is of a unitary thickness under a control gate in the entire (active) region through which current flows. A zone of increased doping concentration (well region) which is near the surface and which determines the transistor threshold voltage is so arranged under the control gate that it occupies the entire area under the control gate which is on the active region and ends within a so-called drift space between the control gate and a highly doped drain region. The entire surface of the drift space is covered by a zone of the conductivity type of the drain region (VLDD), which is lowly doped in comparison with the highly doped drain region.

Cmos-compatible lateral dmos transistor and method for producing such a transistor

A process is for material-removing machining, on both sides simultaneously, of semiconductor wafers having a front surface and a back surface, the semiconductor wafers resting in carriers which are set in rotation by means of an annular outer drive ring and an annular inner drive ring and being moved between two oppositely rotating working disks in a manner which can be described by means of in each case one path curve relative to the upper working disk and one path curve relative to the lower working disk, wherein the two path curves after six loops around the center have the appearance of still being open, and at each point have a radius of curvature which is at least as great as the radius of the inner drive ring.

Process for material-removing machining of both sides of semiconductor wafers

A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQR of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.

Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer

A process for the double-side polishing of semiconductor wafers between two polishing plates which rotate in opposite directions and are covered with polishing cloth, so that at least 2 &mgr;m of semiconductor material is removed. The semiconductor wafers lay in plastic-lined cutouts in a set of a plurality of planar carriers which are made from steel and the mean thickness of which is 2 to 20 &mgr;m smaller than the mean thickness of the fully polished semiconductor wafers. The set comprises only those carriers whose difference in thickness is at most 5 &mgr;m, and each carrier belonging to the set has at least one unambiguous identification feature which assigns it to the set. An item of information contained in the identification feature is used in order for the plastic linings to be exchanged at fixed intervals and to ensure that the semiconductor wafers remain in the same order after the polishing as before the polishing. There is also a carrier which is suitable for carrying out the process.

Process for the double-side polishing of semiconductor wafers and carrier for carrying out the process

Growing community of inventors

Tittmoning, Germany

Wolfgang Winkler