Other

Infineon Technologies Ag

Wolfgang Welser

Horst Laucht

Gerhard Mueller

In a fabrication method for making spatially etched structures, in particular trench structures for semiconductor memory cells, in a semiconductor substrate made of a semiconductor material, a depth structure is produced in a surface of the semiconductor substrate. Afterward, an etching-resistant layer is deposited in a region of a sidewall of the depth structure, so that the sidewall is essentially not etched during subsequent etching steps. Afterward, an etchant is introduced into the depth structure and a potential field is applied in the semiconductor substrate. As a result, a spatial structure is etched proceeding from a region of the depth structure that is not covered by the etching-resistant layer, the spatial structure being dependent on the potential field.

Fabrication method and apparatus for fabricating a spatial structure in a semiconductor substrate

A fuse configuration for a semiconductor apparatus is described. The fuse configuration has a semiconductor material disposed underneath the fuse and is made porous by implantation and subsequent etching, so that it provides a thermal insulation. The thermal insulation protects the semiconductor body when the fuse is blown due to a decreased energy requirement for blowing the fuse.

Fuse configuration for a semiconductor apparatus

An igniting element, such as is used in a vehicle air bag igniter reduces the power dissipated by the air bag ignition circuit, as well as its space requirement and its costs, by using the ignition switch/switches as the ignition element (,) itself of the ignition circuit. The ignition circuit is integrated in a silicon chip, and has at least one ignition switch constructed as a transistor.

Igniting element

In the case of a semiconductor igniter, particularly for the gas generator of a protection system for vehicle occupants, consisting of a semiconductor layer which is arranged on a carrier with the insertion of a thermal insulation layer, is connected at the end side to electric contact areas and during the current passage in the ignition path range heats up in an ignition-triggering manner, while maintaining a high ignition efficiency, a mechanically secure linking of the semiconductor layer to the carrier is achieved in that the thermal insulation layer is limited to the ignition path range of the semiconductor layer and the semiconductor layer is connected directly with the carrier at its end sections kept free of the thermal insulation layer.

Growing community of inventors

Kirchheim, Germany

Wolfgang Welser