Siemens Aktiengesellschaft

Osram Gmbh

Wolfgang Teich

Herbert Brunner

Georg Bogner

Werner Spaeth

Norbert Stath

Wolfgang Gramann

Johann Luft

Ernst Nirschl

Raimund Oberschmid

Heinz Haas

Werner Späth

A measuring arrangement for measuring product parameters of a component in the epitaxial layer () of a wafer comprises measuring probe () on whose contact side () a recess () is installed, into which an electrolyte can be poured. The electrolyte produces an electrical connection between a contact body (), which is charged with a signal from a pulsed-current source, and the surface () of the wafer (). A detector () serves for detecting the light which is emitted by the component.

Method for measuring product parameters of components formed on a wafer and device for performing the method

A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.

Radiation emitter component

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Wuppertal, Germany

Wolfgang Teich