Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Osram Gmbh

Osram Opto Semiconductor Gmbh

Wolfgang Schmid

Alfred Lell

Christoph Eichler

Norbert Linder

Wolfgang Reill

Soenke Tautz

Dimitri Dini

Tony Albrecht

Johannes Baur

Franz Eberhard

Christoph Klemp

Markus Bröll

Peter Brick

Klaus Streubel

Anna Strozecka-Assig

Johannes Saric

Sebastian Pickel

Dominik Eisert

Stephan Lutgen

Tansen Varghese

Markus Broell

Martin Müller

Uwe Zeitner

Ralph Wirth

Stefan Illek

Martin Rudolf Behringer

Marc Philippens

Petrus Sundgren

Isabel Otto

Stefan Bader

Ulrich Steegmüller

Bernd Mayer

Christian Karnutsch

Hans-Christoph Eckstein

Alvaro Gomez-Iglesias

Johann Luft

Thomas Schlereth

Ivar Tångring

Robert Walter

Michael Huber

Andreas Rudolph

Philipp Kreuter

Sönke Tautz

Benjamin Michaelis

Stefen Illek

In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Optoelectronic semiconductor chip and method for producting an optoelectronic semiconductor chip

In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element for making contact with the first semiconductor layer, and a second contact element for making contact with the second semiconductor layer. The first semiconductor layer may be arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation may be output via the first main surface of the second semiconductor layer. The first contact element and the second contact element may each be arranged on a side of a first main surface of the first semiconductor layer. The first contact element may have a first section extending in a first direction, and a second section connected to the first section and extending in a second direction different from the first direction.

Optoelectronic semiconductor component with contact elements and method for producing the same

In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with a radiation side, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, and a rear side, which are arranged one above the other in this order. The active layer generates or absorbs primary electromagnetic radiation in the intended operation. Further, the optoelectronic semiconductor chip comprises a first contact structure and a second contact structure for electrically contacting the semiconductor layer sequence. The second contact structure is arranged on the rear side and is in electrical contact with the second semiconductor layer. The radiation side is configured for coupling in or coupling out primary radiation into or out of the semiconductor layer sequence. The rear side is structured and includes scattering structures configured to scatter and redirect the primary radiation.

A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer

Optoelectronic semiconductor chip with high reflectivity and method for producing an optoelectronic semiconductor chip with high reflectivity

A method for producing a contact structure for an optoelectronic semiconductor component is given, comprising the steps:

Optoelectronic semiconductor component having a contact structure, and method for producing a contact structure for an optoelectronic semiconductor component

An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.

Optoelectronic semiconductor chip with two separate light emitting layers

An optoelectronic component includes first and second semiconductor layers and an active layer that generates electromagnetic radiation, wherein the active layer is disposed between the first and second semiconductor layers, a recess in the first semiconductor layer, a front side provided for coupling out the electromagnetic radiation, a first electrical connection layer and a second electrical connection layer disposed on a rear side opposite the front side, wherein the first electrical connection layer is arranged at least partially in the recess, and a contact zone with a dopant of a second conductivity type different from the first conductivity type, wherein the contact zone adjoins the recess, and the first semiconductor layer and the second semiconductor layer are highly doped to prevent diffusion of the dopant from the contact zone into the first semiconductor layer and diffusion of the dopant from the contact zone into the second semiconductor layer.

Optoelectronic component and method of manufacturing an optoelectronic component

An LED chip includes a carrier, a semiconductor layer sequence, a reflective layer sequence arranged in regions between the carrier and the semiconductor layer sequence, wherein the reflective layer sequence includes a dielectric layer facing the semiconductor layer sequence and a metallic mirror layer facing away from the semiconductor layer sequence, and an encapsulating layer arranged in places between the carrier and the reflective layer sequence, the encapsulating layer extending in places through the reflective layer sequence into the semiconductor layer sequence and thus forming a separating web separating an inner region of the reflective layer sequence from an edge region of the reflective layer sequence.

Light emitting diode chip with a reflective layer sequence

An optoelectronic component is disclosed. In an embodiment the component includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first and second layer, wherein the active layer directly borders the first and second layer, a radiation surface directly bordering the second layer, one or more contact isles for electrically contacting the first layer and one or more through-connections for electrically contacting of the second layer, wherein the through-connections are formed through the first layer and the active layer and open into the second layer, wherein the contact isles are located laterally next to one another directly on a rear side of the first layer facing away from the radiation surface, wherein the through-connections are arranged in regions between the contact isles in a top view of the rear side.

Optoelectronic component

An optoelectronic device is disclosed. In an embodiment the device includes a semiconductor crystal with a surface having a first lateral region, a second lateral region and a third lateral region, a contact area arranged on the surface in the first lateral region, the contact area comprising a first metal and a first layer including a dielectric arranged on the surface in the third lateral region. The device further includes a second layer having an optically transparent, electrically conductive material arranged on the contact area, the first layer and the second lateral region of the surface and a third layer having a second metal arranged on the second layer.

Method for producing an optoelectronic device with a contact area of accurately and reproducibly defined size

A method for producing an optoelectronic component is disclosed. A first layer which has a dielectric to the surface of a semiconductor crystal. A photoresist layer is applied and structured on the first layer. The photoresist layer is structured in such a way that the photoresist layer has an opening, The first layer is partially separated in order to expose a lateral region of the surface. A contact area having a first metal is applied in the lateral region of the surface. The photoresist layer is removed. A second layer, which comprises an optically transparent, electrically conductive material, and a third layer, which comprises a second metal, are applied.

Method for producing an optoelectronic device with a contact area of accurately and reproducibily defined size

An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one active layer. Furthermore, the semiconductor chip has a top-side contact structure on a radiation main side of the semiconductor layer sequence and an underside contact structure on an underside situated opposite to the radiation main side. Furthermore, the semiconductor chip includes at last two trenches that extend from the radiation main side towards the underside. As seen in a plan view of the radiation main side, the top-side contact structure and the underside contact structure are arranged in a manner spaced apart from one another. Likewise as seen in a plan view of the radiation main side, the trenches are located between the top-side contact structure and the underside contact structure.

Optoelectronic semiconductor chip

A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.

Laser light source

Growing community of inventors

Deuerling/Hillohe, Germany

Wolfgang Schmid