Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Maxim Integrated Gmbh

Ulis Sas

Wolfgang Reinert

Peter Merz

Hans Joachim Quenzer

Marten Oldsen

Hans-Joachim Quenzer

Vanessa Stenchly

Jochen Quenzer

Oliver Schwarzelbach

Sebastien Tinnes

Cécile Roman

Kai Gruber

Stephan Warnat

Martin Heller

Dirk Kaehler

Dirk KÄHLER

The invention relates to methods of producing a cap substrate, to methods of producing a packaged radiation-emitting device at the wafer level, and to a radiation-emitting device. By producing a cap substrate, providing a device substrate in the form of a wafer including a multitude of radiation-emitting devices, arranging the substrates one above the other such that the substrates are bonded along an intermediate bonding frame, and dicing the packaged radiation-emitting devices, improved packaged radiation-emitting devices are provided which are advantageously arranged within a cavity free from organics and can be examined, still at the wafer level, in terms of their functionalities in a simplified manner prior to being diced.

Method of producing a cap substrate, and packaged radiation-emitting device

Infrared radiation micro device, cover for such a device and method for its fabrication, the device comprising a substrate and a cover and an infrared radiation detecting, emitting or reflecting infrared micro unit, the infrared micro unit being arranged in a cavity defined between the substrate and the cover, the cover comprising an antireflective surface texture to enhance the transmissibility of infrared radiation, wherein a distance frame formed in an additive process on the substrate side of the cover and/or the cover side of the substrate is arranged between substrate and cover.

Housing for an infrared radiation micro device and method for fabricating such housing

The invention refers to an electromagnetic radiation sensor micro device for detecting electromagnetic radiation, which device comprises a substrate and a cover at least in part consisting of an electromagnetic radiation transparent material, and comprising a reflection reducing coating and providing a hermetic sealed cavity and an electromagnetic radiation detecting unit arranged within the cavity. The reflection reducing coating is arranged in form of a multi-layer thin film stack, which comprises a first layer and a second layer arranged one upon the other. The first layer has a first refractive index and the second layer has a second refractive index different from the one of said first layer. First and second layer are of such layer thickness that for a certain wavelength there is destructive interference. The invention also refers to a wafer element as well as method for manufacturing such a device.

Electromagnetic radiation micro device, wafer element and method for manufacturing such a micro device

The present invention relates to a method for forming a micro-surface structure on a substrate, in particular for producing a micro-electromechanical component, a micro-surface structure of this type, a method for producing a micro-electromechanical component having a micro-surface structure of this type and such a micro-electromechanical component. The invention is particularly relevant for components of microsystem technology (MST, micro-electromechanical systems MEMS) and the construction and connection technology for hermetically housing micro components, preferably using getter materials.

Method for forming a micro-surface structure and for producing a micro-electromechanical component

The present invention relates to an inertial sensor, preferably an acceleration sensor or multi-axis acceleration sensor as a microelectromechanical construction element, said sensor comprising a housing with at least one first gas-filled cavity in which a first detection unit is disposed moveably relative to the housing for detection of an acceleration to be detected, wherein the inertial sensor comprises a damping structure.

Microelectromechanical inertial sensor with atmospheric damping

The present application relates to a multiple component which is to be subsequently individualized by forming components containing active structures, in addition to a corresponding component which can be used in microsystem technology systems. The multiple component and/or component comprises a flat substrate and also a flat cap structure which are bound to each other such that they surround at least one first and one second cavity per component, which are sealed against each other and towards the outside. The first of the two cavities is provided with getter material and due to the getter material has a different internal pressure and/or a different gas composition than the second cavity. The present application also relates to a method for producing the type of component and/or components for which gas mixtures of various types of gas have a different absorption ratio in relation to the getter material.

Micromechanical housing comprising at least two cavities having different internal pressure and/or different gas compositions and method for the production thereof

A microstructured component with microsensors or other active microcomponent is provided. The microstructured component includes a substrate and at least one housing arranged on the substrate with one or more active microstructures situated on it.

Housed active microstructures with direct contacting to a substrate

The invention relates to a cover wafer with a core and with an inside, whereby the inside has one or more annular outer areas, (an) annular area(s), which inwardly adjoin(s) the outer area(s), and has (a) inner area(s), and to a component cover with only one annular outer area on its inside. The invention is characterized in that at least area(s) has/have a buffer layer, which has a wetting angle of &#x3c;35&#xb0; for a metallic eutectic solution that melts in a range of &#x3e;265&#xb0; C. to 450&#xb0; C. The invention also relates to a component cover having one of the areas which has said buffer layer in a comparable manner. The invention additionally relates to a wafer component or to a component, which can be inserted using microsystem technology and which has a cover wafer or component cover applied with the aid of a solder material, and to a method for the production thereof.

Solder material lining a cover wafer attached to wafer substrate

The present invention relates to a method for producing electrical bushings through non-conductive or semiconductive substrates, which are particularly suitable for electrical applications. The method is characterized in that a semiconductor substrate or a non-conductive substrate () whose front side has an electrically conductive contact point () at at least one location is provided with a recess () from its rear side such that the recess () on the front side of the substrate ends under that location or one of the locations at which the electrically conductive contact point or one of the electrically conductive contact points is situated and is completely covered by the latter, to which an electrically conductive structure () which establishes a conductive connection between the respective contact point and the rear-side surface () of the substrate through the recess or at least one of the recesses is applied from the rear side of the substrate. The invention also relates to substrates and components having a design that is predetermined by the method according to the invention.

Method for producing electrically conductive bushings through non-conductive or semiconductive substrates

The present invention is directed to a method for testing the leakage rate of an encapsulated device comprising the step: bombing the device with a neon and/or argon atmosphere using a bombing pressure of at least more than environmental pressure and measuring the quality factor before and after bombing. Preferably, the bombing time is about 10 to 100 hours, and the bombing pressure is 1.5 to 100 bar, more preferably 1.5 to 5 bar and most preferably about 4 bar. With this test, the leakage rate of fine leaks of the device may be determined.

Method for testing the leakage rate of vacuum encapsulated devices

A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method including providing the semiconductor device, the semiconductor device including a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device, exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period, and setting a second temperature, which is different from the first, after the predetermined time period has expired, the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature.

Method of creating a predefined internal pressure within a cavity of a semiconductor device

A beam-shaping element comprises a carrier substrate () bearing a thin-layer metallization which is structured for shaping the beam of optical radiation. The thin-layer metallization includes at least two metallic layers (), which, upon impingement of the optical radiation (), react with each other accompanied by a permanent change in color in response to a certain intensity and/or an irradiation period of the optical radiation ().

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Neumuenster, Germany

Wolfgang Reinert