Osram Opto Semiconductors Gmbh

Siemens Aktiengesellschaft

Osram Oled Gmbh

Wolfgang Reill

Soenke Tautz

Alfred Lell

Christoph Eichler

Wolfgang Schmid

Dimitri Dini

Uwe Strauss

Thomas Schwarz

Stephan Lutgen

Tony Albrecht

Ulrich Steegmüller

Frank Singer

Peter Brick

Hans-Ludwig Althaus

Harald König

Wolfgang Gramann

Werner Spath

Christian Lauer

Harald Koenig

Michael Kühnelt

Sönke Tautz

A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.

Semiconductor laser diode

A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.

Laser light source

A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.

A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate.

A laser light source comprises, in particular, a semiconductor layer sequence () having an active region () and a radiation coupling-out area () having a first partial region () and a second partial region () different than the latter, and a filter structure (), wherein the active region () generates, during operation, coherent first electromagnetic radiation () having a first wavelength range and incoherent second electromagnetic radiation () having a second wavelength range, the coherent first electromagnetic radiation () is emitted by the first partial region () along an emission direction (), the incoherent second electromagnetic radiation () is emitted by the first partial region () and by the second partial region (), the second wavelength range comprises the first wavelength range, and the filter structure () at least partly attenuates the incoherent second electromagnetic radiation () emitted by the active region along the emission direction ().

Laser light source and method for producing a laser light source

An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.

Edge-emitting semiconductor laser

An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.

Edge emitting semiconductor laser chip

A laser light source including a semiconductor layer sequence having an active region and a radiation coupling-out area having a first partial region and a second partial region different than the first partial region, and a filter structure. The active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first and second partial regions. The second wavelength range includes the first wavelength range, and the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction.

A laser light source comprises, in particular, a semiconductor layer sequence () having an active layer having at least two active regions () which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence () along an emission direction (), said side area being embodied as a radiation coupling-out area (), a respective electrical contact area () above each of the at least two active regions () on a main surface () of the semiconductor layer sequence (), and a surface structure in the main surface () of the semiconductor layer sequence (), wherein the at least two active regions () are arranged in a manner spaced apart from one another in the active layer () transversely with respect to the emission direction (), each of the electrical contact areas () has a first partial region () and a second partial region () having a width that increases along the emission direction () toward the radiation coupling-out area (), the surface structure has, between the at least two electrical contact areas (), at least one first depression () along the emission direction () and also second depressions (), and the first partial regions () of the electrical contact areas () are in each case arranged between at least two second depressions ().

A method for production of a plurality of semiconductor chips () in a wafer composite. A semiconductor layer sequence () is grown on a growth substrate (), metallization () is applied to the semiconductor layer sequence (), a metal layer () is electrochemically deposited onto the metallization (), and the semiconductor layer sequence () is then structured and separated to form individual semiconductor chips (). The electrochemically applied metal layer () is particularly suitable for use as a heat spreader, for dissipation of the heat produced by the semiconductor chips ().

Method for production of a plurality of semiconductor chips, and a semiconductor component

A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser () having a vertical emitter () and at least one pump radiation source (), which are monolithically integrated alongside one another onto a common substrate (), is described. The semiconductor laser device additionally has a heat-conducting element (), which is in thermal contact with the semiconductor laser () and has a mounting area provided for mounting on a carrier (). Methods for producing such a surface emitting semiconductor laser device are furthermore described.

Lateral optically pumped surface-emitting semiconductor laser on a heat sink

An optically pumped, surface-emitting semiconductor laser having a mode-selective apparatus () which is intended for suppression of predeterminable, higher resonator modes of the semiconductor laser. The mode-selective apparatus is arranged in the beam path of a pump beam source () of the surface-emitting semiconductor laser.

Optically pumped surface-emitting semiconductor laser and optical projection apparatus having a semiconductor laser such as this

An optoelectronic module for bidirectional optical data transmission has a molded element provided as a beam splitter, which consists essentially of a material that is transparent for the emitted radiation and the received radiation, and in which a beam splitter is embedded. A transmitting component, a receiving component and a radiation focusing device are advantageously directly connected to the molded element.

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Pentling, Germany

Wolfgang Reill