Infineon Technologies Ag

International Business Machines Corporation

Qimonda Ag

Altis Semiconductor, Snc

Infineon Technologies Austria Ag

Atlis Semiconductor

Wolfgang Raberg

Juergen Zimmer

Ulrich Karl Klostermann

Klemens Pruegl

Bernhard Winkler

Florian Schoen

Andreas Strasser

Dieter Suess

Chanro Park

Philip Louis Trouilloud

Werner Weber

Armin Satz

Stephen L Brown

Hubert Brueckl

Clemens Muehlenhoff

Hermann Wendt

Hermann Gruber

Arunava Gupta

Sergio Morini

Sebastian Maerz

Stephan Schmitt

Holger Wille

Frank Findeis

Guenter Schwarzberger

Tobias Wurft

Anton Mauder

David William Abraham

Rainer Leuschner

Michael C Gaidis

Stuart Stephen Papworth Parkin

Rainer Markus Schaller

Heinz Hoenigschmid

Mahesh Govind Samant

Siegfried Schwarzl

John Patrick Hummel

Gregory Costrini

Thomas Lange

Klaus-Dieter Ufert

Cay-Uwe Pinnow

Maximilian Werner

Markus Loehndorf

Kia-Seng Low

Stefan Miethaner

Goran Keser

Jooil Park

Alfred Kersch

Martin Freitag

Igor Kasko

Matthias Rose

Thomas Kimmer

Karine Pillet

Michael Vieth

Felix Gow

Milan Agrawal

Ren Yi You

Mitja Rebec

Florian Schön

Sivanandha K Kanakasabapathy

Anton Bachleitner Hofmann

Dominik Durner

The present disclosure relates to a magnetic sensor device, including a substrate spanning a plane, a plurality of series-connected TMR resistance elements arranged on the substrate, wherein each of the TMR resistance elements has at least one magnetic tunnel contact and wherein each of the TMR resistance elements has the same reference magnetization. The series-connected TMR resistance elements are arranged and interconnected on the substrate in such a way that an electric current flow direction in the plane relative to the reference magnetization changes at least once along a current path through the series-connected TMR resistance elements.

Magnetic sensor device

Some embodiments relate to a magnetoresistive sensor element comprising a magnetoresistive strip. The magnetoresistive strip includes a first linear segment, and a second linear segment arranged in series with the first linear segment. The second linear segment adjoins the first linear segment at a first inner corner corresponding to a first obtuse angle having a first magnitude. The magnetoresistive strip also includes a third linear segment arranged in series with the first and second linear segments, and a fourth linear segment arranged in series with the first, second, and third linear segments. The fourth linear segment adjoins the third linear segment at a second inner corner corresponding to a second obtuse angle having a second magnitude. Te second magnitude differs from the first magnitude.

XMR sensors with serial segment strip configurations

The described techniques address issues associated with coreless current sensors by implementing a current sensor solution that may use as few as two, two-dimensional (2D) linear sensors. The discussed techniques provide a coreless current sensor solution that is independent of the sensor position with respect to a current-carrying conductor. An algorithm is also described for auto-calibration of sensor position with respect to a current-carrying conductor to calculate the current flowing through the conductor. The calculation of current may be performed independent of the position of the current-carrying conductor with respect to the sensor, and thus the disclosed techniques provide additional advantages regarding installation flexibility without sacrificing measurement accuracy.

Coreless auto-calibrating current sensor for measuring current in an adjacent wire

A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.

Current sensor for improved functional safety

A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.

Stray field robust XMR sensor using perpendicular anisotropy

Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.

Example implementations are concerned with magnetoresistive sensors and with corresponding fabrication methods for magnetoresistive sensors. One example here relates to a magnetoresistive sensor having a layer stack. The layer stack comprises a reference layer having a reference magnetization, which is fixed and has a first magnetic orientation. The layer stack comprises a magnetically free layer. The magnetically free layer has a magnetically free magnetization. The magnetically free magnetization is variable in the presence of an external magnetic field. The magnetically free magnetization has a second magnetic orientation in a ground state. One of the first or the second magnetic orientation is oriented in-plane and the other is oriented out-of-plane. The layer stack comprises a metal multilayer. In this case, either the metal multilayer is arranged adjacent to the magnetically free layer, or the metal multilayer constitutes the magnetically free layer.

Magnetoresistive sensor and fabrication method for a magnetoresistive sensor

A package-integrated power semiconductor device is provided, which includes at least one power transistor coupled to a current path, a current measurement device and a package. The current measurement device is electrically insulated from and magnetically coupled to the current path. The current path and the current measurement device are arranged so as to enable the current measurement device to sense the magnetic field of a current flowing through the current path. The at least one power transistor, the current measurement device, and the current path are arranged inside the package. Further, a power module assembly including the package-integrated power semiconductor device as well as a method of operating the package-integrated power semiconductor device are provided.

Power semiconductor device with integrated current measurement

Methods and apparatuses for producing magnetoresistive apparatuses are provided. Here, structures are formed for defining regions of the same magnetization, magnets are magnetized, and structures are formed within the magnets of the regions, for example, in order to define magnetoresistive elements.

Methods and apparatuses for producing magnetoresistive apparatuses

A method includes measuring a first property of a magnetic field using a bridge circuit with spatially separated bridge branches, and measuring a second property of the magnetic field using a magnetic field sensor located between the spatially separated bridge branches.

Method for measuring a magnetic field using a magnetic field sensor device having a second magnetic field sensor between parts of a first magnetic field sensor

A magnetic field sensor includes at least one magneto-resistive spin-valve sensor element configured to sense a first magnetic field component, and at least one AMR sensor element configured to sense a second magnetic field component which is perpendicular to the first magnetic field component.

Magnetic field sensor and magnetic field sensing method

A sensor circuit includes a first magnetoresistor. The first magnetoresistor has a first resistance transfer function. Furthermore, the sensor circuit includes a second magnetoresistor. The second magnetoresistor has a second resistance transfer function. The second resistance transfer function is different from the first resistance transfer function. The first magnetoresistor and the second magnetoresistor are connected in series between a first supply terminal of the sensor circuit and a second supply terminal of the sensor circuit.

Magnetic sensor circuits and systems and methods for forming magnetic sensor circuits

A device according to an embodiment may comprise a magneto-resistive structure comprising a magnetic free layer with a spontaneously generated in-plane closed flux magnetization pattern and a magnetic reference layer having a non-closed flux magnetization pattern.

Magneto-resistive structured device having spontaneously generated in-plane closed flux magnetization pattern

Growing community of inventors

Sauerlach, Germany

Wolfgang Raberg