Applied Materials, Inc.

Wolfgang R Aderhold

Aaron Muir Hunter

Joseph Michael Ranish

Abhilash J Mayur

Blake R Koelmel

Alexander N Lerner

Nir Merry

Khurshed Sorabji

Dongming Iu

Balasubramanian Ramachandran

Sundar Ramamurthy

Leonid Mark Tertitski

Ji-Dih Hu

Dean C Jennings

Benjamin Colombeau

Yi-Chiau Huang

Samuel C Howells

Yi Wang

Wei Liu

Stephen Moffatt

Lara Hawrylchak

Ajit Balakrishna

Norman L Tam

Benjamin B Bierman

Brian L Haas

Michael Liu

Ryan C Boas

Patrick F Stone

Ole Luckner

Michael Wayne Stowell, Jr

Shashank Sharma

Bruce E Adams

Majeed Foad

Kartik Bhupendra Shah

Andreas G Hegedus

Jiping Li

Jingmei Liang

Martin Jay Seamons

Ralf Hofmann

Jallepally Ravi

Praket Prakash Jha

Martin A Hilkene

Ilya Lavitsky

DongQing Li

Ali Zojaji

Wen Teh Chang

Kartik Santhanam

Ilias Iliopoulos

Peter A Knoot

Andy Lo

Bindusagar Marath Sankarathodi

Shankar Muthukrishnan

Yong Sun

Huy Q Nguyen

Tarpan Dixit

Maxim Shaposhnikov

Dayal Ramachandran

Boris Axelrod

Amritha Rammohan

Joseph R Ranish

Embodiments disclosed herein include a method of monitoring a condition of a chamber. In an embodiment, the method comprises processing a substrate in the chamber, providing substrate history and chamber data to a model of the chamber, where the model of the chamber is configured to predict a chamber cleanliness, comparing the predicted chamber cleanliness against a performance limit, and flagging the chamber for preventive maintenance (PM) when the predicted chamber cleanliness is above the performance limit.

Rapid thermal processing (RTP) chamber outgassing removal

Embodiments disclosed herein include a method of calibrating a processing tool. In an embodiment, the method comprises providing a first substrate with a first emissivity, a second substrate with a second emissivity, and a third substrate with a third emissivity. In an embodiment, the method may include running a recipe on each of the first substrate, the second substrate, and the third substrate, where the recipe includes a set of calibration attributes. In an embodiment, the method may further comprise measuring a layer thickness on each of the first substrate, the second substrate, and the third substrate. In an embodiment, the method further comprises determining if the layer thicknesses are uniform.

Emissivity independence tuning

Embodiments of the present disclosure generally relate to apparatus for processing a substrate, and more specifically to reflector plates for rapid thermal processing. In an embodiment, a reflector plate assembly for processing a substrate is provided. The reflector plate assembly includes a reflector plate body, a plurality of sub-reflector plates disposed within the reflector plate body, and a plurality of pyrometers. A pyrometer of the plurality of pyrometers is coupled to an opening formed in a sub-reflector plate. Chambers including a reflector plate assembly are also described herein.

Reflector plate for substrate processing

Embodiments disclosed herein include a method of setting a target profile. In an embodiment, the method comprises obtaining a first gain curve for one or more temperature sensor offsets, and obtaining a second gain curve for one or more zone multipliers. In an embodiment, the method further comprises combining the first gain curve and the second gain curve into a thermal model. In an embodiment, the method further comprises obtaining a reference data set, and using the thermal model to generate temperature sensor offsets and/or zone multipliers to apply to the reference data set in order to generate the target profile.

Auto fine-tuner for desired temperature profile

Embodiments disclosed herein include methods of processing substrates in a tool. In an embodiment, the method of processing the substrate in the tool, comprises receiving an augmented recipe with a machine learning (ML) and/or an artificial intelligence (AI) module. In an embodiment, the augmented recipe comprises, a recipe for processing the substrate in the tool, and a matrix identifier that corresponds to one or more substrate properties. In an embodiment the method further comprises using the ML and/or AI module to retrieve a data set from a database, where the data set is associated with the matrix identifier, and using the ML and/or AI module to modify the augmented recipe to form a modified recipe, where the modification is dependent on the data set.

Coded substrate material identifier communication tool

A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.

Doping techniques

The present disclosure relates to heating a substrate in a rapid thermal processing (RTP) chamber. The chamber may contain a rotatable assembly configured to accommodate and rotate the substrate while a heat source inside the RTP chamber applies heat to the substrate. The rotatable assembly is partially disposed outside the RTP chamber. A seal may formed around the rotatable assembly and maintain a vacuum inside the RTP chamber while the rotatable assembly rotates. The rotatable assembly may configured to accommodate various-sized substrates.

Rotatable thermal processing chamber

Embodiments disclosed herein include a method of processing a substrate. In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on the one or more substrate parameters. In an embodiment, the method may further comprise placing the substrate on an edge ring, and heating the substrate to a second temperature with a low temperature closed loop controller. In an embodiment, the method further comprises heating the substrate to a third temperature with a high temperature closed loop controller.

RTP substrate temperature one for all control algorithm

Embodiments disclosed herein include a method for determining a temperature error of a pyrometer. In an embodiment, the method comprises measuring a first signal with a first sensor of the pyrometer and measuring a second signal with a second sensor of the pyrometer. In an embodiment, the method further comprises determining a reflectivity of a reflector plate from the first signal and the second signal, and determining the temperature error using the reflectivity.

Pyrometry error detection sensor for RTP temperature control system

Aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. In one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.

Systems, methods, and apparatus for correcting thermal processing of substrates

A method for controlling temperature in a thermal processing chamber includes determining temperature sensitivity profiles of one or more heating elements or zones for a substrate based on measurements of the substrate. The method also includes selecting a temperature offset value for each of the one or more heating elements or zones. The method also includes simulating the adjustment of each of the one or more zone offset values to a respective final adjusting value that achieves a predetermined goal. The method further includes adjusting the temperature offset values for each of the one or more heating elements to the respective final adjusted values.

Temperature offset and zone control tuning

Embodiments disclosed herein include a method of centering a substrate in a chamber. In an embodiment, the method comprises inserting the substrate into the chamber with a robot arm, obtaining a delta time value for a second pyrometer relative to a first pyrometer, where the delta time value is a duration of time between when the first pyrometer is covered by the substrate and when the second pyrometer is covered by the substrate, calculating a time offset value of the delta time value relative to an ideal delta time value, where the ideal delta time value is the delta time value when the substrate is perfectly centered in a first direction perpendicular to the motion of the substrate, and comparing the time offset value to a graph or a lookup table that correlates the time offset value to a distance offset value.

Automated substrate placement to chamber center

Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

System for non radial temperature control for rotating substrates

Aspects of the present disclosure relate to apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers. In one example, the distance measured is used to determine a center position shift of the edge ring.

Apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers

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Cupertino, CA, United States of America

Wolfgang R Aderhold