Macom Technology Solutions Holdings, Inc.

Wolfgang Parz

Cristian Stagarescu

Richard Robert Grzybowski

Malcolm R Green

Roe Hemenway

Daniel Meerovich

Jichi Ma

Nathan Bickel

Meng Wang

Yifan Jiang

Akshitha Gadde

Described herein are examples of improved semiconductor lasers having improved facet reliability for operation at high power and high current without significant change in device performance. The semiconductor laser may include a first semiconductor layer, an active layer, a second semiconductor layer sequentially adjacent to each other and arranged on a substrate, and a contact layer. In one example, the improved semiconductor laser may have a conductive contact less than the length of the semiconductor laser cavity and/or a dielectric layer arranged on at least one of the end portions of the contact layer.

Semiconductor laser having improved facet reliability

A semiconductor optical device includes a first facet bounding a first end of the semiconductor optical device. The semiconductor optical device further includes a waveguide having a first end proximate the first facet, the first end of the waveguide being tapered towards the first facet. The first facet has a curvature to increase modal reflectivity at a first interface at which the first end of the waveguide meets the first facet.

Tapered waveguide semiconductor optical devices with increased facet reflectivity

Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

Techniques for laser alignment in photonic integrated circuits

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Ithaca, NY, United States of America

Wolfgang Parz