Siemens Aktiengesellschaft

Wolfgang Nikutta

Werner Reczek

Johannes Stecker

Johann Rieger

Ewald Michael

Hartmud Terletzki

Xaver Guggenmos

Focko Frieling

Ioannis Chrysostomides

An integrated semiconductor circuit includes a semiconductor substrate. A number of first potential buses carry a first supply potential of the semiconductor circuit during operation. A number of second potential buses carry a second supply potential of the semiconductor circuit during operation. A number of circuit portions formed on the substrate are each connected between one of the first and one of the second potential buses for being supplied with electrical voltage. Connection points are formed on the substrate and are each assigned to one of the circuit portions for receiving an input or output signal for the circuit portion during operation of the circuit portion. Protective circuits are formed on the substrate and are each assigned to one of the circuit portions for preventing overvoltage. The protective circuits each have an input side connected to one of the connection points and an output side connected to the circuit portion. A common potential bus bar carries a reference potential being common with respect to all of the connection points during operation. The protective circuits have discharge paths coupled with the potential bus bar for dissipating overvoltages.

Integrated semiconductor circuit

A semiconductor component includes a semiconductor body having a terminal pad, a semiconductor function element, and an electrically conductive connecting line connecting the terminal pad to the semiconductor function element. A protective element for protecting against electrostatic discharge is connected between the terminal pad and the semiconductor function element. A first supply line for a first supply potential is connected to the semiconductor function element. A second supply line for the first supply potential is connected to the protective element and is electrically conductively connected to the first supply line. A clamp element is connected to the connecting line and to the first supply line, for limiting a voltage applied to the clamp element to a clamp value.

Semiconductor component with protective structure for protecting against

Integrated digital MOS-semiconductor circuit, including a first circuit part for generating charging and switching pulses, a second circuit part having an input connected to the first circuit part for being addressed by the pulses supplied by the first circuit part, first, second and third self-locking MOS-field effect transistors each having a source, a drain and a gate electrode, first and second capacitors having first and second terminals, the first terminal of the first capacitor being connected through the first transistor to the input of the second circuit part, the first terminal of the second capacitor being connected through the second transistor to the input of the second circuit part, a first supply potential source at reference potential, a second supply potential source different from reference potential being connected to at least one terminal of the third transistor and through the third transistor to the first terminal of the second capacitor, the second supply potential source also being connected to the gate electrode of the first transistor, the gate of the second transistor being connected between the first transistor and the first terminal of the first capacitor, means for supplying a first digital pulse having a given beginning and end to the second terminal of the first capacitor, and means for supplying a second digital pulse having a given beginning and end to the second terminal of the second capacitor, the first and second digital pulse simultaneously ending with the pulse supplied by the first circuit part, the beginning of the pulse supplied by the first circuit part occurring earlier than the beginning of the first and second digital pulses, and the beginning of the second digital pulse occurring at least as late as the beginning of the first digital pulse.

Pulse enhancement circuit for digital integrated circuit

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Munich, Germany

Wolfgang Nikutta