Siemens Aktiengesellschaft

Wolfgang Muller

Karl-Heinz Kusters

Franz-Xaver Stelz

Walter-Ulrich Kellner

Alfred Schuetz

Ewald Soutschek

A semiconductor memory configuration in a semiconductor substrate includes bit lines, word lines, and memory cells each including one memory capacitor and one MOS selection transistor having two conducting regions and a gate electrode. Each memory capacitor is connected to one of the conducting regions of the transistor. The other of the conducting regions of the transistor is connected to one of the bit lines, and the gate electrode of the transistor is connected to one of the word lines. An insulating field oxide or buried insulating oxide with substantially vertical sidewalls is provided. A trench lies adjacent to the insulating field oxide or buried insulating oxide and adjacent to one of the conducting regions. The capacitors are each disposed in one trench for each memory cell. A first insulating layer covers the inner trench wall surface. A first electrode of the capacitor is disposed perpendicular to the substrate surface on the first insulating layer completely inside the trench. A second insulating layer is disposed on the first electrode. A second electrode is disposed vertically on the second insulating layer in the trench. A contact is connected between the first electrode of the capacitor and one of the conducting regions of the transistor laterally through an opening formed in the first insulating layer on the inner trench wall surface. Methods for producing the semiconductor memory configuration and a memory matrix having at least four of the memory cells, are also provided.

Semiconductor memory device with trench capacitor and method for the

Semiconductor memory device with trench capacitor

An integrated circuit for emitting a clock voltage V.sub.A which alternates between positive and negative voltage levels with the clock voltage being controllable by means of a unipolar clock voltage V.sub.E and wherein the circuit is a very simple small semiconductor arrangement which has three series connected field effect transistors T1, T2 and T3 with the first end of the series arrangement receiving a first reference voltage and the other end of the series arrangement receiving a second reference voltage. The first and second field effect transistors 1 and 2 or first and second channel types and have gate terminals which are commonly connected to the control input V.sub.E and the junction point 3 of the first two field effect transistors T1 and T2 connected to the output terminal and also connected by way of a capacitor to the gate of the third field effect transistor T3 which is of the first channel type. The gate of the third field effect transistor T3 is connected by way of a diode D or an additional field effect transistor T4 of the first channel type which has its gate connected to the second reference voltage potential.

Integrated circuit for the emission of a voltage which alternates

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Putzbrunn, Germany

Wolfgang Muller