Siemens Aktiengesellschaft

Wolfgang Gross

Martin Bechteler

Christian Schuderer

Bernd Kerl

Werner Hofler

The invention relates to a system and a method for creating maintenance plans for machines and/or installations simply, dynamically and at low cost, in particular an automation system from production automation and/or process automation. The said machines and/or installations comprise one or more components, wherein the components contain maintenance information, and wherein the system has a device for generating a maintenance plan by combining the maintenance information of the components.

System for creating maintenance plans

In a complex plant most of the problems or errors will occur only once. Therefore corrective maintenance and trouble-shooting staff can not go back or hark back to ready-made solutions for these problems or errors. The present invention provides a method and a computerized system which enables the corrective maintenance and trouble-shooting staff having access to experiences made on third party plants regarding these problems or errors.

Method and system for providing problem identification and trouble-shooting services

Method, system and device for predictive recognition of errors in a manufacturing system, said comprising: online monitoring of data of the manufacturing system; and online comparing said data with archived error patterns to predict errors supposed to occur in the manufacturing system; whereby the archived error patterns are built and recognized by statistical methods and data mining methods. The present invention can be used for discrete or continuous or batch processes.

Method, system and device for predictive error recognition in a plant

Conventional turnoff power semiconductor devices each comprise a p-n junction blocking in case of turnoff, one zone of which, lying at the p-n junction, has a high doping gradient. But this produces a low dynamic voltage stability characteristic for the power semiconductor device. To increase the dynamic voltage stability characteristic of the power semiconductor device, it is proposed to provide one zone in the form of a region having at least a width of twenty microns viewed from the p-n junction, wherein a maximum doping gradient dN.sub.2 /dx=5.times.10.sup.16 cm.sup.-4 and a predetermined basic dopant concentration is present.

Turn-off power semiconductor component

A power thyristor includes a semiconductor body having first and second main surfaces, the first main surface being planar; at least first and second metal electrodes disposed at least on the first main surface; the first electrode having a contact surface lying in a first plane parallel to the first main surface; the second electrode having a contact surface lying in a second plane parallel to the first main surface; the contact surface of the first electrode being further from the first main surface than the contact surface of the second electrode; the first electrode being formed of first and second layers and the second electrode being formed of a metal with a given thickness; the first layer being adjacent the first main surface and being formed of polycrystalline silicon; and said second layer being disposed on the first layer and being formed of the same metal with the same given thickness as the second electrode.

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Erlangen, Germany

Wolfgang Gross