Robert Boschgmbh

Seg Automotive Germany Gmbh

Wolfgang Feiler

Robert Plikat

Paul Mehringer

Klaus Heyers

Christopher Otte

Stefan Hornung

Rainer Topp

Horst Meinders

Alfred Goerlach

Ning Qu

Norbert Hog

Bruno Hodapp

Peter Flohrs

Peter Urbach

Stephan Ernst

Kuno Wolf

Stephan Schwaiger

Jan-Hendrik Alsmeier

Alberto Martinez-Limia

Thomas Koester

Dick Scholten

Thomas Jacke

Henning Hauenstein

Matthias Schmidt

Joachim Rudhard

Dirk Balszunat

Thomas Raica

Jochen Seibold

Harald Schueler

Jie Ge

Andreas Stratmann

Jens Baringhaus

Christian Tobias Banzhaf

Holger Heinisch

Daniel Krebs

M Henning Hauenstein

Stefan Ernst

Dieter Streb

Andreas Pack

Axel Schwarz

Qu Ning

Siegbert Sautter

Markus Wolff

Henning M Hauenstein

A vertical fin field-effect transistor. The transistor has a semiconductor fin, an n-doped source region, an n-doped drift region, an n-doped channel region in the semiconductor fin situated vertically between the source region and the drift region, a gate region horizontally adjacent to the channel region, a gate dielectric electrically insulating the gate region from the channel region, a boundary surface between the gate dielectric and the channel region having negative boundary surface charges, a p-doped gate shielding region situated below the gate region so that, given the vertical projection, the gate shielding region is situated within a surface limited by the gate dielectric, a source contact electrically conductively connected to the source region, and an electrically conductive region between the gate region and the p-doped gate shielding region. The p-doped gate shielding region is electrically conductively connected to the source contact by the electrically conductive region.

Vertical fin field effect transistor, vertical fin field effect transistor arrangement, and method for forming a vertical fin field effect transistor

A trench transistor. The transistor including: a semiconductor region, a trench structure formed in the semiconductor region; a gate insulation layer and an electrically conductive gate layer formed on the gate insulation layer in the trench structure, and a gate contact, which is electrically conductively connected to the gate layer in an edge area of the trench transistor. A thickness of the gate insulation layer in the edge area of the trench transistor is greater than in an active area of the trench transistor.

Trench transistor

A power transistor cell including a layer arrangement, which includes a front side and a rear side, the front side being situated opposite the rear side. A trench extends starting from, and perpendicular to, the front side along a first direction into the layer arrangement. The trench extends at least into a current-spreading layer, and expands along a second direction, which is situated perpendicularly to the first direction. Field shielding areas are situated at least partially in the current-spreading layer, wherein source areas and field shielding contacting areas are situated alternatingly along the second direction. One portion each of the body areas is situated between each source area and each field shielding contacting area. The field shielding contacting areas connect the field shielding areas to first metal areas on the front side. The field shielding contacting areas make contact at least partially with side faces of the trench.

Power transistor cell and power transistor having field shielding contacting areas connecting field shielding areas to metal areas

A vertical SiC MOSFET having a source terminal, a drain terminal, and a gate region, as well as an epitaxial layer disposed between the source terminal and the drain terminal and having a doping of a first type, is furnished, a horizontally extending intermediate layer, which has regions having a doping of a second type different from the doping of a first type, being embedded into the epitaxial layer. The vertical SiC MOSFET is notable for the fact that at least the regions having doping of a second type are electrically conductively connected to the source terminal. The gate region can be disposed in a gate trench.

Vertical SiC MOSFET

A motor vehicle electrical system which includes an electric machine, an active bridge rectifier, and at least one control device, the at least one control device being configured for converting an alternating voltage which is output by the electric machine at a number of phase connections into a direct voltage by controlling active switching elements of the bridge rectifier. An arrangement is provided configured for initiating a short circuit of at least two of the phase connections as soon as a signal characterizing the direct voltage exceeds an upper threshold value, and for deactivating the short circuit as soon as the signal characterizing the direct voltage subsequently falls below a lower threshold value. An evaluation device is provided configured for detecting a value of the direct voltage, for filtering the detected value, and for providing the filtered value as the signal characterizing the direct voltage.

Overvoltage protection for a motor vehicle electrical system in the event of a load dump

A rectifier module for an active bridge rectifier having two switching elements, connected in series between two end terminals, and between which a center tap is formed, and a control circuit including a monitoring unit, a synchronization unit, and a control unit, the monitoring unit detecting a measuring voltage and outputting a request signal when the measuring voltage exceeds an upper threshold value. The synchronization unit outputs a synchronization signal to a synchronization terminal as long as the monitoring unit outputs the request signal, and otherwise to monitor the synchronization terminal for a synchronization signal. The control unit switches one of the two switching elements into a conductive state at least in sections during an activation period of time, when the monitoring unit outputs the request signal and/or when the synchronization signal is detected and is optionally recognized as valid by the monitoring. Also described is an active bridge rectifier including corresponding rectifier modules, a generator array including such a bridge rectifier, a corresponding motor vehicle electrical system, an operating method, and an arrangement for the method.

Voltage surge protection for active rectifiers in the event of load shedding

A method for operating an active rectifier including a multitude of controllable semiconductor switching elements, in which a switch is carried out between a first control mode and a second control mode for controlling the semiconductor switching elements, and vice versa, the semiconductor switching elements being controlled with a first switching time in the first control mode and with a second switching time in the second control mode, the second switching time being greater than the first switching time.

Method for operating an active rectifier, circuit system, and computer program for controlling a switching between modes of operation of an active rectifier

Electronic module (), and an electric motor () containing one, and also a production method for one, having an electrically conductive first substrate () which has a basic body () and which has a second electrically conductive substrate () mounted on it, and having at least one power component which is arranged on a first substrate (), and the second substrate () is fitted with further components () on a side () which is remote from the first substrate (), where the second substrate () has a smaller base area () than the basic body () of the first substrate (), and the power components () are mounted on the first substrate () outside the outer perimeter () of the second substrate ()&#x2014;next to the latter.

Electronic module and method for producing such a module

A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

Semiconductor component

Electric motor (), in particular for adjusting moving parts in a motor vehicle, comprising an electronic unit () with a sandwich construction, which contains a first electrically conductive substrate () and a second electric conductive substrate (), between which power components are located and electrically connected to both substrates (), and a side () of the second substrate () facing away from the first substrate () is equipped with additional electronic components (), wherein the first substrate () is embodied as a punched grid (), which together with the second substrate () is extrusion coated with a plastic body () in such a way that the extensions () of the punched grid () protrude from the plastic body (), forming an electrical and/or mechanical interface () for connecting additional motor components ().

Electric motor comprising an electronic unit with a punched grid

A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.

A semiconductor power component having an anode contact on the reverse side, an emitter region of a first conductor type on the reverse side, which is connected to the anode contact on the reverse side, a drift zone which is connected to the emitter region that is on the reverse side and extends partially to the front surface, an MOS control structure on the front side, having a control contact positioned in insulated fashion, a cathode contact on a front side which is connected to a source region and a first body region. The drift zone has first and second drift region of a second conductor type and a third drift region of first conductor type. First drift region is a buried region, second drift region connects the front surface to first drift region, and third drift region connects the first and/or second body region to first drift region. The degree of compensation (K(y)) that is ascertainable from the second and third drift region is greater than one and has a maximum in the region of the side of the third drift region facing away from the front surface.

Metal insulator power semiconductor component (MIS) and a method for producing the same

A semiconductor circuit configuration is described, in particular for ignition applications, having a semiconductor power switching device which has a first main terminal, a second main terminal and a control terminal; a clamping diode device which is switched between the first main terminal and the control terminal for clamping an external voltage (V) which is applied at the first main terminal; the clamping diode device having a first part with a first clamp voltage and a second part with a second clamp voltage (V'), the second part being connected in series with the first part; a controllable semiconductor switching device which is connected in parallel with the first part for controllable bridging of the first part, so that either the sum (V) of the first and the second clamp voltages, or the second clamp voltage (V&#x2032;) is provided for clamping the external voltage (V) applied at the first main terminal; and a control circuit for controlling the controllable semiconductor switching device as a function of a predetermined operating state of the semiconductor power switching device.

Semiconductor circuit, especially for ignition purposes, and the use of the same

A method for packaging electronic assemblies and a multiple chip package, at least one power semiconductor chip being applied to a base plate using a first solder, at least one logic chip being applied to the base plate, the logic chip and the base plate being positioned electrically insulated from one another, at least one logic chip being connected to the at least one power semiconductor chip using signal transmission lines, and the electronic assembly including the at least one power semiconductor chip and the at least one logic chip being packaged using a molding compound in order to provide a multiple chip package.

Method for packaging electronic modules and multiple chip packaging

A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 &#x3bc;m.

Semiconductor power component and a method of producing same

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Reutlingen, Germany

Wolfgang Feiler