Siemens Aktiengesellschaft

Wolfgang Endler

Karl-Heinz Zschauer

Heinz Splittgerber

A process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy wherein, in order to avoid bead-growth on a substrate, at least the lower region of an epitaxy solution chamber is clad with a substrate material so as to displace the location of the bead growth away from the actual substrate and toward the region of the cladding. This process is useful for producing GaAs-(Ga, Al) As and (Ga, In) (As, P) mixed crystal layers for luminescent diodes and laser diodes.

Process for producing epitaxial semiconductor material layers on

A method for manufacturing a semiconductor structure, especially for optoelectronic components, in which, at least one layer of a further semiconductor compound is deposited epitaxially on a substrate of a semiconductor compound. The surface of the substrate is provided with a multiplicity of bevelled structures of the further semiconductor compound. Prior to deposition, the surface of the substrate is provided with a multiplicity of mesas in a predetermined distribution, from each of which a bevelled structure is then generated. The plane and fault-free crystal surface of the bevels is preserved when further layers are deposited. The method is especially well suited for the manufacture of optoelectronic and microwave components.

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Zorneding, Germany

Wolfgang Endler