X-fab Semiconductor Foundries Ag

Melexis Gmbh

Wolfgang Einbrodt

Daniel Gaebler

Uwe Eckoldt

Konrad Bach

Alexander Hoelke

Michael Foertsch

Karl-Ulrich Stahl

Horst Zimmermann

A window opening in a semiconductor component is produced on the basis of a gate structure which serves as an efficient etch resist layer in order to reliably etch an insulation layer stack without exposing the photosensitive semiconductor area. The polysilicon in the gate structure is then removed on the basis of an established gate etching process, with the gate insulation layer preserving the integrity of the photosensitive semiconductor material.

Semiconductor component with a window opening as an interface for ambient coupling

The invention relates to a monolithically integrated vertical pin photodiode which is produced according to BiCMOS technology and comprises a planar surface facing the light and a rear face and anode connections located across p areas on a top face of the photodiode. An i-zone of the pin photodiode is formed by combining a low doped first p-epitaxial layer, which has maximum thickness and doping concentration, placed upon a particularly high doped p substrate, with a low doped second nepitaxial layer that borders the first layer, and ncathode of the pin photodiode being integrated into the second layer. The p areas delimit the second n epitaxial layer in a latent direction while another anode connecting area of the pin diode is provided on the rear face in addition to the anode connection.

Monolithically integrated vertical pin photodiode used in biCMOS technology

The aim of the invention is to configure a photodetector () such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evaluation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component () is assigned to the chip face onto which the light preferably falls. Electronic circuit components () are arranged on the opposite chip face. Electrical connections () between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.

Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method

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Erfurt, Germany

Wolfgang Einbrodt