Infineon Technologies Ag

Wolfgang Diewald

Roland Rupp

Bernhard Goller

Jan Richter

Marko Swoboda

Gerald Lackner

Ralf Rieske

Alexander Binter

Guenter Schagerl

Heimo Graf

Klaus M&uuml;mmler

Klaus MÜMMLER

Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices

The invention relates to a method for applying adjusting marks on a semiconductor disk. A small part structure consisting a non-metal is produced in an extensive metal layer and the semiconductor disk is subsequently planed in said region with the help of chemical and mechanical polishing. The structural sizes in the metal layer and the chemical-mechanical polishing process are adjusted to each other, in such a way that the small part non-metal structure protrudes above the extensive metal layer after polishing.

Application of alignment marks to wafer

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Villach, Austria

Wolfgang Diewald