Leybold-heraeus Gmbh

Siemens Aktiengesellschaft

Leybold Aktiengesellschaft

Demetron Gesellschaft Fuer Elektronik-werkstoffe M.b.h.

Demetron Gesellschaftfur Electronik-werstoffe Mbh

Wolf-Dieter Munz

G A Siewert

Horst Dietrich

Dieter Hoffman

Michael Scherer

Bernd Hensel

Dieter Hofmann

Otto Knotek

Klaus-Jurgen Heimbach

Helmut Petersein

Siegfried Bock

Hans W Potzlberger

Jorg Goebel

Klaus J Heimbach

Rolf Adam

Heinz Wenzl

A process using a multiple-substance alloy having a gold content most preferably in the range of 94 to 98 percent by weight as a target in a cathode sputtering apparatus is disclosed. The alloy further contains non-gold elements of aluminum, copper and preferably an element of the group of Co, Ni, G, Ti, In, Cd, Sn, Fe and Pd.

Process and apparatus for sputter coating a gold alloy onto a substrate

Process and apparatus for coating a tool with a layer of a compound which contains at least one of carbon and nitrogen and at least one of titanium, zirconium, chromium, tungsten, tantalum, vanadium, niobium, hafnium and molybdenum. The apparatus includes a vacuum chamber and a substrate holder for accommodating at least one tool with the substrate holder at a bias of between -40 and -200 V relative to ground. The apparatus includes at least two magnetron sputtering cathodes disposed in mirror symmetry to the substrate holder. The target contains at least one metal selected from the group consisting of T, Zr, Cr, W, Ta, V, Nb, Hf and Mo. The apparatus includes at least one gas source for supplying the vacuum chamber with a noble gas and a reaction gas. The reaction gas contains at least one of nitrogen and a gaseous carbon compound. The apparatus includes at least one anode in the edge region of each target so that the anodes are positioned in mirror symmetry with respect to the target holder. Each of the anodes is connected to a voltage means for applying a voltage of +10 to +200 V relative to ground.

Process for equipment to coat tools for machining and forming techniques

A multiple-substance alloy used as a target in a cathode sputtering apparatus, and having a gold content most preferably in the range of 94-98 percent by weight, is disclosed. The alloy further contains non-gold alloys of aluminum, copper and preferably an element of the group of Co, Ni, Ga, Ti, In, Cd, Sn, Fe and Pd.

Multiple-substance alloy for targets of cathode sputtering apparatus

An underlayer of at least one a carbonitride of titanium, zirconium, hafnium or vanadium or hafnium nitride may be under a surface layer at least containing gold or on a still-undermore decorative article, and preferably both. It has a brilliance approximating that of gold so that, when appropriately color matched to the surface layer, it disguises spots of the surface layer worn away in use of the article. The underlayer and surface layer may be deposited in a cathode vaporization process from corresponding metallic cathode targets in appropriate neutral or reactive atmospheres.

Hard, gold-colored under layer for a gold or gold-containing surface

A multicomponent alloy for targets employed in the sputter coating of gold layers, said alloy having 35% to 55%, preferably either 50% or 42%, non-aurous alloy components.

Multicomponent alloy for sputtering targets

The invention concerns a method of and apparatus for forming electrically conductive transparent oxide coatings on water-containing substrates by magnetic-field reinforced cathodic atomization of a target hot-pressed from powdered oxide ceramic materials. The coatings formed have electrical conductivity. When the atomization process is carried out using direct-current voltages of between 150 and 600 volts and a power density of 3 to 15 and preferably 5 to 10 watts/cm.sup.2, the degree of pressing of the target is at least 75% of the density of the solid material and the atomization atmosphere is maintained at between 1.times.10.sup.-3 and 5.times.10.sup.-2 mbars with a composition of 2 to 20% oxygen, 40 to 70% hydrogen, and the remainder argon. Based upon the speed of travel of the web, a thickness of coating of between 10 and 100 mm and a specific resistance of between 100 and 10,000 .mu..OMEGA.cm are achieved.

Method and apparatus for forming electrically conductive transparent

The invention concerns an array of cathodes for sputtering apparatus that contains first, a target plate made out of the material to be sputtered, second, a system of magnets with poles of opposite signs positioned behind the target plate so that at least some of the lines of magnetic force emerging from the poles pass through and reenter the target plate, and third, a device that can be adjusted to alter the relative positions of the magnets and the target plate. The array is also set up so that at least some of the magnetic lines of force run from the poles through the target plate and back. The purpose of maintaining largely constant sputtering conditions as the target plate is consumed is achieved in accordance with the invention by moving the adjusting device essentially perpendicular to the largest surface of the target plate.

Method and means for controlling sputtering apparatus

A method is disclosed for producing an electric thin layer circuit comprising at least one capacitor and a conductor path and/or a resistor. The number of masks required for the production of such a thin layer circuit is reduced. First and second layers of tantalum-aluminum alloy where the second layer has a tantalum share lower than the first, are applied on an insulating base. In a first masking and etching technique, areas of the first and second layers are etched off outside the circuit elements. At least the second layer is anodically oxidized and the anodically oxidized surface is covered with a silicon dioxide layer so as to form a two layer dielectric for the capacitor. In a second masking and etching technique, not-required areas of the silicon dioxide layer external to the capacitor are removed. By utilizing the silicon dioxide layer remaining as an etching mask, the not-required areas of the tantalum-aluminum oxide layer and the second tantalum-aluminum layer external to the capacitor are removed. In a third etching and masking technique, a conductive surface layer is applied over the silicon dioxide layer at the capacitor element to form a two-layer dielectric capacitor and over the first tantalum-aluminum layer to form the conductor path.

Growing community of inventors

Freigericht, Germany

Wolf-Dieter Munz