Infineon Technologies Ag

Qimonda Ag

Aixuv Gmbh

Wolf-Dieter Domke

Michael Sebald

Siegfried Schwarzl

Jörg Rottstegge

Christoph Hohle

Christian Eschbaumer

Rainer Lebert

Karl Kragler

Larissa Juschkin

Manfred Meisen

The invention concerns an irradiation device for testing objects coated with light-sensitive paint, comprising a EUV radiation source, an optical system for filtering the radiation of the EUV radiation source a chamber for receiving the object, as well as systems for intersecting the trajectory of the rays on the object. The invention also concerns a method for operating such a device. The invention aims at obtaining as quickly as possible an illumination at least partly simultaneous of several irradiation fields, with different doses, by using an inexpensive laboratory radiation source without resorting to complex optical systems. Therefor, the invention provides a device comprising a simplified and compact optical system, with closable diaphragm apertures located in front of the object to be irradiated and at least one control sensor placed on the trajectory of the rays and enabling the radiation dose to be measured.

Irradiation device for testing objects coated with light-sensitive paint

A method for smoothing areas of a structure made of a first material having a predetermined first glass transition temperature on a carrier includes the steps of: (1) applying a second material having a predetermined second glass transition temperature, so that the surface of the structure of the first material is at least partially covered by the second material; (2) increasing the temperature of the first material to a first predeterminable temperature, which is greater than the first glass transition temperature; and (3) lowering the temperature of the first material below the first glass transition temperature of the first material.

Method for smoothing areas in structures by utilizing the surface tension

A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhibits an enhanced transparency for short-wavelength radiation and on the other hand permits chemical consolidation of the structured resist. A process for producing structured resists is a also described.

Silicon resist for photolithography at short exposure wavelengths and process for making photoresists

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Adelsdorf, Germany

Wolf-Dieter Domke