Ii-Vi Delaware, Inc.

Ii-Vi Advanced Materials, LLC

Wlodzimierz Kaplan

Hossein Elahipanah

Sergey Reshanov

Adolf Schöner

Nicolas Thierry-Jebali

Christian Vieider

A modular concept for Silicon Carbide power devices is disclosed where a low voltage module (LVM) is designed separately from a high voltage module (HVM). The LVM having a repeating structure in at least a first direction, the repeating structure repeats with a regular distance in at least the first direction, the HVM comprising a buried grid () with a repeating structure in at least a second direction, the repeating structure repeats with a regular distance in at least the second direction, along any possible defined direction. Advantages include faster easier design and manufacture at a lower cost.

Concept for silicon carbide power devices

Concept for silicon for carbide power devices

A modular concept for Silicon Carbide power devices is disclosed where a low voltage module (LVM) is designed separately from a high voltage module (HVM). The LVM having a repeating structure in at least a first direction, the repeating structure repeats with a regular distance in at least the first direction, the HVM comprising a buried grid with a repeating structure in at least a second direction, the repeating structure repeats with a regular distance in at least the second direction, along any possible defined direction. Advantages include faster easier design and manufacture at a lower cost.

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Sollentuna, Sweden

Wlodzimierz Kaplan