Advanced Technology Materials, Inc.

Other

Macdermid, Incorporated

Witold Paw

Thomas H Baum

Jeffrey F Roeder

Bryan Clark Hendrix

Chongying Xu

Ziyun Wang

Steven A Castaldi

Kesheng Feng

Nilesh Kapadia

John F Swanson

Steve Castaldi

Debra A Desrochers-Christos

John Swanson

Brian Larson

A process is described for treating metal surfaces printed wiring boards and similar substrates to provide improved creep corrosion resistance on such surfaces. A modified organic solderability preservative composition is used in combination with an emulsion polymer to provide a modified polymer coating on the metal surface finish via a chemical reaction to provide enhanced corrosion protection of the surface.

Organic polymer coating for protection against creep corrosion

A method of reducing solder mask interface attack in a process of fabricating printed circuit boards. The method comprises the steps of providing a printed circuit board with a solder mask applied thereon and treating the printed circuit board with an immersion plating solution, wherein the immersion plating solution is plated onto the printed circuit board with the use of ultrasonics in the plating bath. It has been found that the use of ultrasonics at a frequency of about 40 kHz for the entire plating duration provides beneficial results.

Method of using ultrasonics to plate silver

Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(&bgr;-diketonate) (OR) , wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.

Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same

A precursor composition useful for liquid delivery MOCVD, including SBT precursors dissolved in a solvent system containing tetrahydrofuran. The associated liquid delivery MOCVD process may be carried out with vaporization of the precursor composition on a porous vaporization element having an average pore diameter in the range of from about 50 to about 200 micrometers, with the resultant precursor vapor being admixed with a carrier gas to achieve high efficiency formation of SBT films.

MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery

Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate) (L) wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

Tetrahydrofuran-adducted group II &bgr;-diketonate complexes as source reagents for chemical vapor deposition

A precursor composition for forming a zirconium and/or hafnium silicate film on a substrate, e.g., by chemical vapor deposition (CVD). Illustrative precursor compositions include (1) a first precursor metal compound or complex including a silicon alcoxide (siloxide) ligand coordinated to a metal M, wherein M&equals;Zr or Hf and (2) a second precursor metal compound or complex including an aliphatic alcoxide ligand coordinated to a metal M, wherein M&equals;Zr or Hf, wherein the relative proportions of the first and second precursors relative to one another are employed to controllably establish the M/Si ratio in the deposited silicate thin film. The precursor composition may contain a solvent medium, so that the composition is adapted for liquid delivery CVD, to form stable thin-film gate dielectrics for fabrication of microelectronic devices.

Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films

Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

Method of forming Group II metal-containing films utilizing Group II MOCVD source reagents

Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate),(L),wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal .beta.-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH.sub.2 groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as intearated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holoaraphic storage media.

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New Fairfield, CT, United States of America

Witold Paw