Hughes Aircraft Company

Global Communication Semiconductors, LLC

Wing Yau

Cheng P Wen

Shing-Kuo Wang

Yuefei Yang

James M Schellenberg

A semiconductor device includes a semiconductor die, an N-doped region, an N-contact metal, a PN junction mesa, a P-contact metal, a first passivation layer, an anode feed metal, and a cathode feed metal. The semiconductor die may include a plurality of semiconductor layers disposed on an insulating substrate. The N-doped region may define an active area of the device. The N-contact metal may be disposed on a first portion of the N-doped region. The PN junction mesa may be disposed on a second portion of the N-doped region. The PN junction mesa may comprise a hyperabrupt N-doping layer disposed on the first portion of the N-doped region and a P-doped layer disposed on the hyperabrupt N-doping layer. The P-contact metal may be disposed on the P-doped layer of the PN junction mesa. The first passivation layer may cover the semiconductor layers of the semiconductor device and have openings for the N-contact metal and the P-contact metal. The anode feed metal may connect the P-contact metal to a first bond pad. The anode feed metal generally forms an arch from the P-contact metal to the first bond pad and the arch defines a space between the anode feed metal and the first passivation layer covering the semiconductor layers and a the of the PN junction mesa.

Method of making wide tuning range and super low capacitance varactor diodes

Three active FET baluns, using resonant, reactive and resistive/reactive compensation are disclosed suitable for monolithic implementation. A single balanced mixer configuration including a resistive/reactive active FET balun coupled with a pair of single ended FET mixers in a push pull configuration is disclosed which is also suitable for monolithic implementation.

Planar broadband FET balun

Disclosed herein is an N-way, broad band planar power divider/combiner circuit for dividing or combining RF signals which includes a tapered strip of electrically conductive material having a plurality of conductor fingers which define a plurality of ports at the wide end of the taper, and having a narrow end which defines single port. The tapered metal strip is mounted onto a dielectric slab, and isolation resistors connect adjacent fingers. A single RF signal can be fed into the single port which will be divided into a plurality of signals of equi-amplitude and equi-phase. Conversely, a plurality of RF signals can be fed into the ports at the wide end which will be combined into a single signal.

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Torrance, CA, United States of America

Wing Yau