Ucl Business Plc

Wing Ng

Adnan Mehonic

Anthony Joseph Kenyon

Anthony Kenyon

A method for manufacturing a memory resistor device. A first layer of a dielectric material is deposited onto a first electrode. A subsection of the first layer of the dielectric material is removed to expose one or more edges of the dielectric material and a second layer of the dielectric material is deposited to create one or more boundaries between the one or more edges of the first layer of the dielectric material and the second layer of the dielectric material. A second electrode is provided, wherein the one or more boundaries between the one or more edges of the first layer of the dielectric material and the second layer of the dielectric material extend at least partially from the first electrode to the second electrode.

Method for manufacturing a memory resistor device

A switching resistor has a low resistance state and a high resistance state. The switching resistor comprises a dielectric layer disposed between a first electrode and a second electrode. The switching resistor further comprises a textured boundary surface between the first electrode and the dielectric layer. The textured boundary surface promotes the formation of a conductive pathway in the dielectric layer between the first electrode and the second electrode.

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London, United Kingdom

Wing Ng