Hong Kong Beida Jade Bird Display Limited

Raysolve Optoelectronics (suzhou) Company Limited

Jade Bird Display (shanghai) Limited

Wing Cheung Chong

Lei Zhang

Qiming Li

Fang Ou

Huiwen Xu

Jen-Shyan Chen

Yijing Chen

Methods for manufacturing a light emitting diode (LED) structure. One exemplary method includes forming a first reflector layer and a semiconductor structure on a first substrate, performing an implantation operation to form an isolation material surrounding at least one optical cavity unit in the semiconductor structure, forming a passivation layer on the semiconductor structure, forming an electrode layer on the passivation layer, and forming a second reflector layer on the passivation layer and the electrode layer.

Light emitting diode structure having resonant cavity and method for manufacturing the same

The LED structure includes a substrate and a plurality of LED units formed on the substrate. Each LED unit includes a bonding layer formed on the substrate, a first doping type semiconductor layer formed on the bonding layer, a second doping type semiconductor layer formed on the first doping type semiconductor layer, a passivation layer formed on the second doping type semiconductor layer and a portion of the first doping type semiconductor layer; and an electrode layer formed on a portion of the passivation layer and contacting the second doping type semiconductor layer. The plurality of LED units include a first LED unit and a second LED unit adjacent to the first LED unit. The first doping type semiconductor layer of the first LED unit horizontally extends to the first doping type semiconductor layer of the second LED unit adjacent to the first LED unit, and the first LED unit and the second LED unit are individually functionable LED units.

Light emitting diode structure with individual fuctionable LED units and method for manufacturing the same

A LED structure includes a substrate, a bonding layer, a first doping type semiconductor layer, a multiple quantum well (MQW) layer, a second doping type semiconductor layer, a passivation layer and an electrode layer. The bonding layer is formed on the substrate, and the first doping type semiconductor layer is formed on the bonding layer. The MQW layer is formed on the first doping type semiconductor layer, and the second doping type semiconductor layer is formed on the MQW layer. The second doping type semiconductor layer includes an isolation material made through implantation, and the passivation layer is formed on the second doping type semiconductor layer. The electrode layer is formed on the passivation layer in contact with a portion of the second doping type semiconductor layer through a first opening on the passivation layer.

Light emitting diode structure and method for manufacturing the same

A LED structure includes a substrate, a first semiconductor layer, a second semiconductor layer, and a color conversion layer. The first semiconductor layer is formed on the substrate, and the first semiconductor layer includes a first LED unit and a second LED unit formed therein. The first LED unit and the second LED unit emit light of a first color. The second semiconductor layer is formed above the first semiconductor layer, and the second semiconductor layer includes a third LED unit formed therein. The third LED unit emits light of a second color different from the first color. The color conversion layer is formed on the first LED unit to convert light of the first color to light of a third color different from the first color and the second color.

Full color light emitting diode structure and method for manufacturing the same

A LED structure includes a substrate, a LED unit formed on the substrate, a first reflector layer formed between the substrate and the LED unit, and a second reflector layer formed on the LED unit. A common anode layer of the LED unit is formed on the first reflector layer. The first reflector layer, the LED unit and the second reflector layer are configured to collectively provide a resonant cavity.

A LED structure includes a substrate, a plurality of LED units, a bonding layer and a metal contact. The substrate includes a driving circuit, and a plurality of LED units is formed on the substrate. The bonding layer is formed between the substrate and the plurality of LED units, and the metal contact is formed in the bonding layer beneath each LED unit to electrically connect each LED unit with a contact pad of the driving circuit. A first sectional area of the metal contact is smaller than a second sectional area of each LED unit.

A stack of strata containing LEDs is fabricated by repeatedly bonding unpatterned epitaxial structures. Because the epitaxial structures are unpatterned (e.g., not patterned into individual micro LEDs), requirements on alignment are significantly relaxed. One example is an integrated multi-color LED display panel, in which arrays of micro LEDs are integrated with corresponding driver circuitry. Multiple strata of micro LEDs are stacked on top of a base substrate that includes the driver circuitry. In this process, each stratum is fabricated as follows. An unpatterned epitaxial structure is bonded on top of the existing device. The epitaxial structure is then patterned to form micro LEDs. The stratum is filled and planarized to allow the unpatterned epitaxial structure of the next stratum to be bonded. This is repeated to build up the stack of strata.

Making semiconductor devices by stacking strata of micro LEDs

A semiconductor apparatus includes a driver circuit wafer including a plurality of driver circuits arranged in an array, a bonding metal layer formed over the driver circuit wafer, and a horizontally continuous functional device epi-structure layer formed over the bonding metal layer and covering the driver circuits.

Semiconductor apparatus and method of manufacturing the same

Making semiconductor devices by stacking strata of micro LEDS

Various embodiments include a multi-color micro-LED array light source that enables well-overlapped light beams of different colors. The multi-color micro-LED array light source includes a thermally conductive substrate and multiple arrays of different color micro-LEDs integrated on the thermally conductive substrate. The micro-LEDs within each array are electrically connected so that they can all be driven in unison. The multi-color array light source also includes a controller that is electrically coupled to and that drives the arrays of micro-LEDs. The controller drives the micro-LEDs in a manner that produces an output light distribution with a spatial wavelength and angular distribution that is suitable for use as a light source.

Multi-color micro-LED array light source

Mass transfer of micro structures are effected from one substrate to another using adhesives. In the context of an integrated micro LED display, a micro LED array is fabricated on a native substrate and corresponding CMOS pixel drivers are fabricated on a separate substrate. The micro LED substrate (e.g., sapphire) and the CMOS substrate (e.g., silicon) may be incompatible. For example, they may have different thermal coefficients of expansion which make it difficult to bond the micro LEDs to the pixel driver circuitry. The micro LED array is transferred to an intermediate substrate (e.g., silicon) by use of an adhesive. This intermediate substrate may be used in a process of bonding the micro LED array to the array of pixel drivers. The intermediate substrate is separated from the micro LED array by releasing the adhesive.

Mass transfer of micro structures using adhesives

A display panel with integrated micro-reflectors. The display panel also includes an array of pixel light sources (e.g., micro-LEDs) electrically coupled to corresponding pixel driver circuits (e.g., FETs). The micro-LEDs produce light and the micro-reflectors reduce the divergence of the light produced by the micro-LEDs. Different designs are possible. The micro-reflectors can have different shapes, include the shape of their sidewalls and the shape of their plan cross-section. The array schemes can also vary, including the number of LEDs per micro-reflector. Different fabrication approaches are also possible. In one approach, a support structure is integrated between micro-LEDs. The sides of the support structure are reflective and serve as the reflective sidewalls of the micro-reflector. Alternately, the LED mesa itself can serve as the support structure.

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Hong Kong, China

Wing Cheung Chong