Infineon Technologies Ag

Siemens Aktiengesellschaft

Siemens Aktiengellschaft

Winfried Kamp

Joel Hatsch

Siegmar Koeppe

Siegmar Köppe

Michael Scheppler

Antoine Degrendel

Heinz Söldner

Julie Aunis

Karl Knauer

Joerg Berthold

Manfred Roth

Thomas Künemund

Eva Lackerschmid

Holger Sedlak

Dieter Draxelmayr

Thomas Kuenemund

Michael Kund

Martin Ostermayr

Peter Huber

Tim Schoenauer

Jörg Gliese

Anton Huber

Andreas Kuesel

Thomas Kodytek

Michel d'Argouges

Noel Hatsch

Michel D'Argouges

Ronald Künemund

Ronald K&uuml;nemund

Heinz S&ouml;ldner

Fritz Rothacher

A semiconductor device includes an identification circuit. The identification circuit includes a memory cell which includes a first transistor having a first value of a switching characteristic and a second transistor having a second value of the switching characteristic. The identification circuit is operable to generate a memory-cell-specific identification bit which is dependent on production-dictated differences in the first switching characteristic of the first transistor and the second switching characteristic of the second transistor. The identification circuit further includes a drive circuit for the memory cell. The drive circuit is operable to connect or isolate an upper supply potential and a lower supply potential of the semiconductor device to or from the memory cell independently of one another.

Identification circuit and method for generating an identification bit

A method of testing a latch based memory device is disclosed. The latch based memory device includes a number of latches, electrical connections and a circuit environment of the latches. A storage functionality of the latches can be tested during a first test phase while a functionality of the electrical connections and the circuit environment of the latches can be tested during a second test phase.

Latch based memory device

A latch based memory device includes a plurality of latches and a method of testing the latch based memory device that includes serially connecting the latches with each other so as to form a shift register chain. A bit sequence is input into the shift register chain to shift the bit sequence through the shift register chain. A bit sequence is outputted and shifted through the shift register chain, and the input bit sequence is compared with the output sequence to evaluate the functionality of the latches in a first test phase and to test the remaining structures of the latch based memory device in a second test phase by using, e.g., a conventional scan test approach.

Various methods for determining a layout of an integrated circuit are described. For example, a method is described comprising determining a layout of an integrated circuit comprising a plurality of functional cells, wherein a maximum extent of each of the cells in a first direction is identical and wherein an outer boundary of a first cell of the plurality of cells forms a first polygon with at least five corner points; and storing data representing the layout on a computer-readable medium. Integrated circuits in accordance with the layout are also described.

Integrated circuit and method for determining an integrated circuit layout

A method of fabricating an integrated circuit including arranging a plurality of cells to form a desired floor plan of the integrated circuit, wherein each cell comprises at least one transistor, forming a plurality of circuit constituents from the plurality of cells of the floor plan, wherein each circuit constituent comprises at least one cell and belongs to one of a plurality circuit constituent types, and applying mechanical stress to channel regions of the at least one transistor of each cell based on the circuit constituent type of the circuit constituent to which the cell belongs.

Method of fabricating an integrated circuit with stress enhancement

Circuit for calculating a logic combination of two encrypted input operands recieves first and second dual-rail signals comprising data values in a calculation cycle and precharge values in a precharge cycle, and receives a dual-rail encryption signal comprising encryption values in the calculation cycle and precharge values in the precharge cycle, and outputs a dual-rail result signal comprising encrypted result values in the calculation cycle and precharge values in the precharge cycle. The data and encrypted result values are encrypted with the encryption values of the dual-rail encryption signal according to an encryption rule. A logic circuit determines the encrypted result values according to the logic combination from the data and encryption values, and outputs the encrypted result values in the calculation cycle. A precharge circuit impresses precharge values when precharge values are sensed at a single input, or stops impressing the precharge values only when the first and second dual-rail signals comprise data values and the dual-rail encryption signal comprises encryption values.

Circuit and method for calculating a logic combination of two encrypted input operands

A logic circuit for calculating an encrypted dual-rail result operand from encrypted dual-rail input operands according to a combination rule includes inputs for receiving the input operands and an output for outputting the encrypted result operand. Each operand may comprise a first logic state or a second logic state. The logic circuit comprises a first logic stage connected between the inputs and an intermediate node and a second logic stage connected between the intermediate node and the output. The logic stages are formed to calculate the first or second logic state of the encrypted result operand from the input operands according to the combination rule and to maintain or change exactly once the logic state of the encrypted result operand, independently of an order of arrival of the encrypted input operands, depending on the combination rule, in order to impress the calculated first logic state or second logic state on the output.

Logic circuit and method for calculating an encrypted result operand

A semiconductor device and method of manufacturing thereof. The semiconductor device has at least one NMOS device and at least one PMOS device provided on a substrate. An electron channel of the NMOS device is aligned with a first direction. A hole channel of the PMOS device is aligned with a different second direction that forms an acute angle with respect to the first direction.

Semiconductor device and method for manufacturing the same

An integrated semiconductor circuit has a regular array of logic function blocks (L) and a regular array of wiring zones (X) corresponding thereto. The wiring lines in at least one wiring layer of a wiring zone (X) are realized as line segments that are continuous within the wiring zone and are interrupted at zone boundaries. Furthermore, the semiconductor circuit comprises driver cells that surround a logic cell of the logic function block in an L-shaped manner.

Architecture of function blocks and wirings in a structured ASIC and configurable driver cell of a logic cell zone

A carry-ripple adder has four summing inputs for receiving four input bits having the significance w that are to be summed, three carry inputs for receiving three input carry bits having the significance w, a summation output for outputting an output summation bit having the significance w, and three carry outputs for outputting three output carry bits having the significance 2w.

Carry-ripple adder

A parity checking circuit is designed for continuous parity checking of content-addressable memory cells, and is configured such that during a parity check the number of parity checking steps per data word is the same as the number of bits in the original payload data word to be stored, with the parity checking circuit being formed from four transistors of the same conductance type. The parity checking circuit has a detector, which automatically detects the change in an information state of a memory cell. The detector is in the form of an automatic state device and has a number of catch latches.

Parity checking circuit for continuous checking of the parity of a memory cell

A circuit arrangement for supplying configuration data in an FPGA device includes a plurality of output flip flops allocated to respective configurable logic cells of the FGPGA device. Each output flip flop comprises at least one data input and one data output and a data input of a first output flip flop of the plurality of output flip flops is switchably connected to a data output of a second output flip flop of the plurality of output flip flops for forming a shift register by means of a switching device integrated in the FPGA device.

Circuit arrangement for supplying configuration data in FPGA devices

The invention relates to an adder for adding at least four bits of the same significance w, said adder having a first number of inputs for receiving the bits of the same significance w that are to be added and a number of outputs, the bits to be added being applied to the inputs in presorted form, and the adder adding the bits while taking account of the presorting. The invention also provides an adding device for adding at least four bits of equal significance and a corresponding method.

Multibit bit adder

A mask-programmable logic macro includes at least three input terminals an output terminal and a first set of transistors comprised of at least three transistors formed on a semiconductor substrate, each of the transistors comprising a controllable path and a control terminal. The controllable paths can be connected in series with one another between a first supply terminal and the output terminal by metallizing first metallization regions. The the transistors of the first set of transistors are arranged on the semiconductor substrate in such a way that at least one controllable path of the transistors can be bridged by metallizing one of the first metallization regions. A respective of the input terminals can be connected to a respective of the control terminals by metallizing a second metallization region.

Mask-programmable logic macro and method for programming a logic macro

Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first leakage current reducing element connected between the first resistor and an operating potential, and a second leakage current reducing element connected between the second resistor and the operating potential.

Growing community of inventors

Munich, Germany

Winfried Kamp