Infineon Technologies Ag

Axiom Microdevices, Inc.

Winfried Bakalski

Valentyn Solomko

Nikolay Ilkov

Hans Taddiken

Markus Zannoth

Werner Simbuerger

Anthony Thomas

Ruediger Bauder

Anton Steltenpohl

Andrea Cattaneo

Bernd Schleicher

Herbert Kebinger

Wolfgang Klein

Uwe Seidel

Bernd Eisener

Krzysztof Kitlinski

Danial Tayari

Jochen Essel

Michael Asam

Daniel Kehrer

Semen Syroiezhin

Andreas Wickmann

Oguzhan Oezdamar

Johannes Klaus Rimmelspacher

Pablo Araujo Do Nascimento

Andreas Wiesbauer

Saverio Trotta

Carsten Ahrens

Rahul Magoon

Scott D Kee

Ichiro Aoki

Herbert Knapp

Peter Pfann

Thomas Bruder

Andreas Baenisch

Hans-Dieter Wohlmuth

Paulo Oliveira

Franz Weiss

Marc Jan Georges Tiebout

Günter Donig

Georg Lischka

John Lyu

Roberto Aparico Joo

Ronald Thüringer

A circuit includes a switch coupled between a configuration terminal and an internal node. In a method of operation, the configuration terminal of the circuit is coupled to an internal node during a configuration phase and decoupled from the internal node during normal operation.

Circuit including configuration terminal and method

A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

RF switch with compensation

A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.

RF switch

An antenna tuning circuit is provided. The antenna tuning circuit includes an antenna, an inductor and a variable capacitor. The antenna includes a first terminal, which serves as a feed terminal, and a second terminal, which is separate from the first terminal. The inductor and the variable capacitor are coupled to the second terminal, to tune the antenna.

Antenna tuning circuit, method for tuning an antenna, antenna arrangement and method for operating the same

In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells having a load path and a control node, and a switch driver coupled to the control node. Each of the plurality of series connected RF switch cells includes a switch transistor and a gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the control node. The switch driver includes a variable output impedance that varies with a voltage of the control node.

System and method for a driving a radio frequency switch

A switch includes an input terminal, an output terminal, and a stack including transistors, such as, for example, field effect transistors, coupled in series, the stack being coupled between the input terminal and the output terminal. The switch also includes at least one switching element configured to be selectively operated in a conducting state or a non-conducting state, and at least one overvoltage protection element coupled to the stack by the at least one switching element. By way of example, the switch can implement a radio-frequency switch.

Switch

An RF switch includes two or more coupled RF switch cells, each RF switch cell including a transistor having a first source/drain node, a second source/drain node, and a gate node, a first varactor is coupled between the first source/drain node and the gate node, and a second varactor is coupled between the second source/drain node and the gate node.

Self-adjustable RF switch cell

An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.

RF sensor in stacked transistors

A switch includes an input terminal and an output terminal. The switch also includes a first stack having transistors coupled in series, and a second stack having transistors coupled in series. The first stack and the second stack are connected in parallel with one another.

Switch having first and second switching elements connected in parallel with one another

In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

System and method for biasing an RF switch

In accordance with an embodiment, a method of testing an integrated circuit, includes receiving a supply voltage on the integrated circuit via a first input pin, providing power to circuits disposed on the integrated circuit via the first input pin, comparing the supply voltage to an internally generated voltage, generating a digital output value based on the comparing, and applying the digital output value to a pin of the integrated circuit.

System and method for testing an integrated circuit

An integrated circuit device comprises at least one non-linear circuit. Further the integrated circuit device comprises a plurality of terminal circuits coupled to the non-linear circuit. Each terminal circuit comprises an associated terminal and an inductor coupled to the associated terminal and to the at least one non-linear circuit. A protective device for protection of a circuit, comprises an electro-static discharge protection element configured to be coupled to a circuit terminal and an inductor coupled to the electro-static discharge protection element and configured to be coupled to the circuit. The inductor has a low quality factor.

Integrated circuit device and a device for protection of a circuit

An impedance matching network includes a first terminal, a second terminal, and a reference potential terminal. The impedance matching network further includes a first shunt branch between the first terminal and the reference potential terminal, the first shunt branch including a capacitive element. The impedance matching network also includes a second shunt branch between the second terminal and the reference potential terminal, the second shunt branch including an inductive element. Furthermore, the impedance matching network includes a transmission line transformer with a first inductor path and a second inductor path, wherein the first inductor path connects the first terminal and the second terminal. An alternative impedance matching network includes a transformer and an adaptive matching network. The transformer is configured to transform an impedance connected to a first port so that a corresponding transformed impedance lies within a confined impedance region in a complex impedance plane.

Adjustable impedance matching network

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Munich, Germany

Winfried Bakalski