Qualcomm Incorporated

Wilson Jianbo Chen

Chiew-Guan Tan

Reza Jalilizeinali

Sumit Rao

Aliasgar Presswala

Chiew-Guan (Kelvin) Tan

Richard Dominic Wietfeldt

Lalan Jee Mishra

Helena Deirdre O'Shea

Christopher Kong Yee Chun

Wolfgang Roethig

Umesh Srikantiah

Chang Ki Kwon

ZhenQi Chen

Scott Davenport

Yeshwanth Kumar Mallavajula

An aspect of the disclosure relates to an apparatus including a first field effect transistor (FET) including a first gate configured to receive a first input signal that varies in accordance with a first voltage domain; and a first inverter including a first input configured to receive a second input signal that varies in accordance with a second voltage domain, and a first output configured to generate a first output signal that varies in accordance with the second voltage domain, wherein the first output signal is based on the first and second input signals, and wherein the first FET and the first inverter are coupled in series between first and second voltage rails. Per another aspect, the apparatus includes additional circuitry to allow the apparatus to process signals in accordance with a third voltage domain.

Voltage level shifting with reduced timing degradation

In certain aspects, a receiving circuit includes a splitter, a first receiver, a second receiver, and a boost circuit. The splitter is configured to receive an input signal, split the input signal into a first signal and a second signal, output the first signal to the first receiver, and output the second signal to the second receiver. In certain aspects, the voltage swing of the input signal is split between the first signal and the second signal. The boost circuit may be configured to shift a supply voltage of the second receiver to boost a gate-overdrive voltage of a transistor in the second receiver during a transition of the input signal (e.g., transition from low to high). In certain aspects, the boost circuit controls the gate-overdrive voltage boosting based on the first signal and the second signal.

Dynamic gate-overdrive voltage boost receiver

An aspect of the disclosure relates to an apparatus including an output driver, including: a first p-channel metal oxide semiconductor field effect transistor (PMOS FET); a second PMOS FET coupled in series with the first PMOS FET between an upper voltage rail and an output; a first n-channel metal oxide semiconductor field effect transistor (NMOS FET); and a second NMOS FET coupled in series with the first NMOS FET between the output and a lower voltage rail; a first predriver coupled to gates of the first and second PMOS FETs and first and second NMOS FETs; and a second predriver coupled to the gates of the first and second PMOS FETs and first and second NMOS FETs.

Input/output (I/O) circuit with dynamic full-gate boosting of pull-up and pull-down transistors

An apparatus for generating an output voltage signal based on an input voltage signal. The apparatus includes a first field effect transistor (FET) including a first gate configured to receive a first gate voltage based on the input voltage signal; a second (FET) including a second gate configured to receive a second gate voltage based on the input voltage signal, wherein the first and second FETs are coupled in series between a first voltage rail and a second voltage rail, and wherein the output voltage signal is produced at an output node between the first and second FETs; and a gate overdrive circuit configured to temporarily reduce the first gate voltage during a portion of a transition of the output voltage signal from a logic low level to a logic high level.

Dynamic transistor gate overdrive for input/output (I/O) drivers and level shifters

An output driver in an integrated circuit includes a voltage shifter. The output driver has a low voltage section configured to provide a low voltage signal responsive to an input signal and a high voltage section configured to provide a high voltage signal responsive to the input signal. A first biasing circuit is configured to provide a bias to a first transistor in the high voltage section such that the bias is modified during a transition in the output signal. A second biasing circuit is configured to turn on a second transistor in the high voltage section when the output signal is at a low voltage level. The second transistor is configured to discharge a terminal of the first transistor. The input signal switches between 0 Volts and 0.9 Volts. The output signal switches between 0 Volts and 1.2 Volts or between 0 Volts and 1.8 Volts.

Static and intermittent dynamic multi-bias core for dual pad voltage level shifter

Aspects generally relate to receivers, and in particular to a receiver that converts a high-voltage input signal into a low-voltage signal. The high voltage input signal is split into a upper portion and a lower portion. The upper portion is coupled to a high input receiver that is powered by dynamic supply shifters that can vary supply voltage during operation to optimize switching.

Dynamic power supply shifting

Systems, methods, and apparatus for data communication are provided. A method performed by a bus master includes terminating transmission of a first datagram by signaling a first bus park cycle on a serial bus, causing a driver to enter a high-impedance state, opening an interrupt window by providing a first edge in a clock signal transmitted on a second line of the serial bus, closing the interrupt window by providing a second edge in the clock signal, signaling a second bus park cycle on the serial bus, initiating an arbitration process when an interrupt was received on the first line of the serial bus while the interrupt window was open, and initiating a transmission of a second datagram when an interrupt was not received on the first line of the serial bus while the interrupt window was open.

Asynchronous interrupt with synchronous polling and inhibit options on an RFFE bus

The disclosure relates to a data level shifter circuit including a boost circuit configured to generate a boosted input data signal based on a transition of an input data signal; a first input transistor including a first control signal configured to receive the input data signal; a second input transistor including a second control terminal configured to receive the boosted input data signal, wherein the first and second input transistors are coupled in parallel between a node and a lower voltage rail; and a latch circuit configured to generate an output data signal based on the input data signal, wherein the latch circuit is coupled between an upper voltage rail and the node.

Apparatus and method for data level shifting with boost assisted inputs for high speed and low voltage applications

A latch-based power-on checker (POC) circuit for mitigating potential problems arising from an improper power-up sequence between different power domains (e.g., core and input/output (I/O)) on a system-on-chip (SoC) integrated circuit (IC). In one example, the core power domain having a first voltage (CX) should power up before the I/O power domain having a second voltage (PX), where PX&#x3e;CX. If PX ramps up before CX, the POC circuit produces a signal indicating an improper power-up sequence, which causes the I/O pads to be placed in a known state. After CX subsequently ramps up, the POC circuit returns to a passive (LOW) state. If CX should subsequently collapse while PX is still up, the POC circuit remains LOW until PX also collapses.

Latch-based power-on checker

An input receiver for stepping down a high power domain input signal for a high power domain powered by a high power supply voltage into an output signal for a low power domain includes a waveform splitter. The waveform splitter splits the high power domain input signal into a high voltage signal and a low voltage signal. A high voltage input receiver receives the high voltage signal to produce a received high voltage that is level shifted into a first input signal. A low voltage input receiver receives the low voltage signal to produce a second input signal. A logic circuit generates the output signal from the first input signal and the second input signal.

High voltage input receiver using low-voltage devices

An input/output (I/O) driver that includes circuitry for over-voltage protection of first and second FETs coupled in series between a first rail and an output, and third and fourth FETs coupled between the output and a second rail. The circuitry is configured to generate a gate bias voltage for the second FET that transitions from high to low bias voltages state when the output voltage (V) begins transitioning from low to high logic voltages, and transitions back to the high bias voltage while Vcontinues to transition towards the high logic voltage. Further, the circuitry is configured to generate a gate bias voltage for the third FET that transitions from low to high bias voltages when Vbegins transitioning from high to low logic voltages, and transitions back to the low bias voltage while Vcontinues to transition towards the low logic voltage.

Input/output (I/O) driver implementing dynamic gate biasing of buffer transistors

A back-power prevention circuit is provided that protects a buffer transistor from back-power during a back-power condition by charging a signal lead coupled to a gate of the buffer transistor to a pad voltage and by charging a body of the buffer transistor to the pad voltage.

Output driver with back-powering prevention

In a particular embodiment, a method includes modifying an output impedance associated with the input receiver. In response to modifying the output impedance, the method restricts an output voltage at an output node of the input receiver. Particular embodiments of an input receiver circuit are also disclosed.

Low-power interface and method of operation

An input receiver for stepping down a high-voltage domain input signal into a low-voltage-domain stepped-down signal includes a waveform chopper. The waveform chopper chops the high-voltage domain input signal into a first chopped signal and a second chopped signal. A high-voltage-domain receiver combines the first chopped signal and the second chopped signal into a high-voltage-domain combined signal. A step-down device converts the high-voltage-domain combined signal into a stepped-down low-voltage-domain signal.

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San Diego, CA, United States of America

Wilson Jianbo Chen