Diamonex, Incorporated

Air Products and Chemicals, Inc.

Varian Associates, Inc.

Wilman Tsai

Diwakar Garg

Fred M Kimock

Robert L Iampietro

Paul N Dyer

Robert M Thorogood

Michelangelo Delfino

Robert F Weimer

Mary Elizabeth Day

David H Ying

C Michael Kelly

A method for making an improved metal silicide layer on a silicon substrate by plasma bombardment of the substrate with Ne ions to remove the native oxide without damage or significant implantation of Ne atoms into said silicon, depositing a metal layer over the Ne etched surface and then rapidly thermally causing the metal layer to react with the underlying silicon.

Plasma etch process and TiSi.sub.x layers made using the process

A method for depositing a thick, adherent and coherent polycrystalline diamond (PCD) film onto a metallic substrate using a deposition rate of no greater than 0.4 .mu.m per hour. The resulting PCD Film has a smooth surface finish, enhanced crystal orientation in comparision to industrial grade diamond powder particularly in the (220) and (400) directions, and excellent electrical and thermal properties. The method enables one to deposit PCD films having a thickness of at least 12 microns for applications on flat as well as curved substrates having wide use in the electronics industry. Thick PCD films of this invention have been found to be ideal for dissipating heat from radio frequency (RF) and microwave (MW) devices.

HFCVD method for producing thick, adherent and coherent polycrystalline

An improved hot filament chemical vapor deposition (HFCVD) reactor is disclosed comprising a gas dispersion system, a filament network and an apertured support plate for the substrate. The apertures in the support plate provide for counteracting the natural pressure and temperature gradients which arise within the reactor so that a uniform deposit or material can be coated over the entire surface of multiple small pieces simultaneously. Specifically, the apertured support plate substantially reduces the extent of radial (stagnation point) gas flow adjacent to the substrate which significantly improves coating uniformity.

Hot filament chemical vapor deposition reactor

A coated substrate product is disclosed which comprises a substrate and a polycrystalline diamond layer having a smooth surface finish, enhanced crystal orientation in comparison to industrial grade diamond powder particularly in the (220) and (400) directions, and excellent electrical and thermal properties. Also disclosed is a method for fabricating such a coated substrate in which the polycrystalline diamond layer is chemically vapor deposited onto the substrate at substrate temperatures in the range of 650.degree. to 825.degree. C.

Diamond-on-a-substrate for electronic applications

The present invention involves an efficient process for separating selected components of a gas stream by integrating a cryogenic separation unit and a membrane separation unit. Two embodiments provide for the concurrent generation of an argon-rich stream in the gas or liquid phase, along with a nitrogen-rich product stream, both being produced from a stream normally comprising oxygen, nitrogen, and argon, e.g., air. Broadly, the novel system uses a membrane means to preferentially reject the oxygen component from the recycle stream of the cryogenic unit, concurrently accumulating the argon component to allow its separation as an argon-enriched product stream.

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Cupertino, CA, United States of America

Wilman Tsai