S.o.i.tec Silicon on Insulator Technologies

Soitec

Willy Michel

Walter Schwarzenbach

Daniel Delprat

Sébastien Kerdiles

Nadia Ben Mohamed

Ludovic Ecarnot

Patrick Reynaud

The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 &#x212b; in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.

Method of bonding two substrates

The present invention provides improved methods for fabricating compound-material wafers, in particular a silicon on insulator type wafer. The improved methods lead to reduced numbers of deflects arising on or near the periphery of the wafers. In a first method, wafers are selected in dependence on edge roll off values determined at about 0.5-2.5 mm away from the edge of the wafer, where edge roll off values are determined in dependence on the second derivative of the wafer height profiles. In a second method, wafers selected according to the first method are further processed by bonding, forming a splitting layer, and detaching the two wafers at the splitting layer.

Method for fabricating a compound-material wafer

The invention relates to improvements in a method for molecularly bonding first and second substrates together by placing them in surface to surface contact. The improvement includes, prior to placing the substrates in contact, cleaning the surface of one or both of the substrates in a manner to provide a cleaned surface that is slightly roughened compared to a conventionally polished surface, and heating at least one or both of the substrates prior to placing the substrates in contact while retaining the heating at least until the substrates are in surface to surface contact.

Bonding interface quality by cold cleaning and hot bonding

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Grenoble, France

Willy Michel