Abb Research Ltd.

Okmetic Ltd.

Willy Hermansson

Jan Svensson

Falah Hosini

Gunnar Russberg

Georgios Demetriades

Bo Bijlenga

Lennart Zdansky

Konstantinos Papastergiou

Bertil Nygren

Lennart Ramberg

Gerhard Brosig

Gunnar Asplund

Christopher Ian Harris

Heinz Lendenmann

Staffan Norrga

Mietek Bakowski

Jürgen Häfner

Lennart Ängquist

Peter Lundberg

Tomas Larsson

Magnus Backman

Olle Kordina

Kurt Rottner

Adolf Schoner

Stefan G Johansson

Fredrik Tinglow

Filippo Chimento

Marko Tuominen

Karl Bergman

Dag Sigurd

Nils Lundberg

Fanny Dahlquist

Mikael Ostling

Anders &angst;berg

Christer Ovr&eacute;n

Bo Danielsson

Fanny Dahlqvist

Magnus Callavik

Fredrik Tinglöw

It is presented a gate control circuit comprising: a main gate unit arranged to supply, via a plurality of main gate unit outputs, a gate signal to respective gates of a plurality of power switches, for controlling a main current; and an auxiliary gate unit comprising an optical power converter for converting incoming optical power to an auxiliary electrical gate signal. The auxiliary gate unit is arranged to, when a failure occurs in one of the plurality of power switches, provide the auxiliary electrical gate signal to respective gates of any of the plurality of power switches still being in operation. A corresponding power module and method are also presented.

Gate control circuit, power module and associated method

A gate control circuit including: a gate input arranged to receive an input gate feed signal; a gate output arranged to be connected, during normal operation, to at least one switching module for controlling current through a main circuit, the gate output being connected to the gate input; a power supply; and a switch connected between the power supply and the gate output, the switch being arranged to close as a response to a failure. A corresponding power module and method are also presented.

The invention relates to power networks, and in particular to a battery energy source arrangement and voltage source converter system in such network. The battery energy source arrangement includes battery energy storage, having one or more parallel-connected battery strings and a mechanism for connecting a voltage of the battery strings to a load. The battery energy source arrangement further includes battery string voltage adapter devices connected in series with respective ones of the one or more battery strings wherein the battery string voltage adapter devices are designed to handle only a fraction of the voltage handled by the battery strings.

Battery energy source arrangement and voltage source converter system

A battery energy storage system including a control unit and a plurality of battery units. The battery units are arranged in series, and each battery unit includes a semiconductor switch and a battery module including a plurality of battery cells. Each battery module is connected in series with a respective semiconductor switch, and the control unit is operatively connected to the semiconductor switch and adapted to control the semiconductor switch of every battery unit.

Battery energy storage system with short circuit protection, and method

Storage device for a high voltage electrical power including at least two modules connected in series, each module including at least one dc power-source in a container with positive and negative terminals. The device including positive and negative poles, first and second conductors arranged to form a current path between the poles, the first conductor including a plurality of conductor parts connected to the terminals of the modules to provide a series connection, a first module of the series being connected to one of the poles, and the second conductor is connected between a last module in the series and the other pole, wherein the conductors are arranged to pass through the containers in parallel such that a current flows through the first conductor in a first direction and through the second conductor in an opposite second direction.

Modular energy storage device for a high voltage electrical power system

A dc power source for a high voltage power apparatus, the dc power source including one or more strings including a plurality of dc power source units connected in series, and switches configured to connect and disconnect said strings. The switches are solid-state switches distributed among the power source units of each string, and all solid-state switches in the string are arranged so that they are turned on and off simultaneously. Each switch is connected in parallel with a first controllable semiconductor in a first direction and connected in parallel with a second controllable semiconductor in a second direction which is opposite to the first direction, and the dc power source includes a control unit configured to bypass a failed switch by triggering the forward biased of the first or second controllable semiconductor connected to the failed switch in case a fault in the switch is detected.

DC power source for a high voltage power apparatus

A power compensator for an electric power transmission line. The power compensator includes a voltage source converter, a capacitor and an energy storage device. The energy storage device includes a high voltage battery having a short circuit failure mode, a first main switch and second main switch for disconnecting the battery from the capacitor, and a control unit for operating the first and second switch.

Power compensator and method for providing a black start with that compensator

A battery unit arrangement for high voltage applications. The battery unit arrangement includes a battery unit having a battery chassis, and a switching device. The switching device includes switching mechanism for switching the battery chassis between two positions, a first position connecting the battery chassis to a pole of the battery unitand a second position connecting the battery chassis to a zero potential. The invention also relates to a connection and disconnection arrangement and methods for operating such connection and disconnection arrangement.

Battery unit arrangement for high voltage applications, connector and disconnector arrangement and method

A method for controlling the temperature dependence of a junction barrier Schottky diode of a semiconductor material having an energy gap between the valence band and the conduction band exceeding 2 eV provides for doing this when producing the diode by adjusting the on-state resistance of the grid portion of the diode during the production for obtaining a temperature dependence of the operation of the diode adapted to the intended use thereof.

Method concerning a junction barrier Schottky diode, such a diode and use thereof

An electric circuit comprises a plurality of high power switching services connected in series and adapted to be controlled to be all conducting or blocking substantially simultaneously act together as a single switch and each holding a part of a high voltage to be held by the switch in the blocking state of the switching devices. Each switching device has an avalanche diode of SiC connected in anti-parallel therewith and adapted to start to conduct current when reverse biased as of a predetermined voltage limit for preventing that the voltage across the respective switching device exceeds such limit.

Electric circuit

A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making the two adjacent p-type emitter layer regions form a continuous depleted region therebetween in this state.

Schottky diode of SiC and a method for production thereof

High voltage silicon carbide semiconductor device with bended edge

The present invention is directed to a device for heat treatment of objects. It comprises a susceptor for receiving an object in the form of a substrate and a gas mixture fed to the substrate for epitaxial growth of a crystal on said substrate by Chemical Vapor Deposition. The susceptor includes an inner wall and an outer, circumferential wall enclosing the inner wall at a distance therefrom. The inner wall defines a chamber for receiving the object. An enclosed space is formed between the inner and outer wall, and is filled with a powder. The powder is made of SiC, a group III nitride or alloys thereof. Also, for heating the susceptor and thereby also the object, a Rf-field radiator is provided surrounding the susceptor.

Device for heat treatment of objects and a method for producing a

A method for producing a bipolar semiconductor device having a first layer doped according to a first doping type, the first layer being adapted to have minority charge carriers injected thereinto from a second layer of the device of a doping type opposite to that of the first layer in a forward conducting state of the device, comprises the steps of a) epitaxially growing the first layer and b) providing at least one region of the first layer with the minority charge carriers having a lifetime lower than in other parts of the first layer, the lower lifetime region of the first layer being formed directly during the epitaxial growth of this region by changing composition of substances fed to the first layer for the growth thereof when the region is grown.

Method for producing a bipolar semiconductor device having SiC-based

A converter circuit has at least one switching device and a SiC diode arranged to be conducting when the device is turned off and reverse-biased when the device is turned on.

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Vasteras, Sweden

Willy Hermansson