International Business Machines Corporation

Willie Lester Muchrison, Jr

Chih-Chao Yang

Oscar Van Der Straten

Lisamarie White

A magneto-resistive random access memory with segmented bottom electrode includes a magnetic tunnel junction pillar above a first portion of a bottom electrode layer, the first portion of the bottom electrode layer includes a metal region. A sidewall spacer is disposed along sidewalls of the magnetic tunnel junction pillar and above a second portion of the bottom electrode layer including a metal-oxide region. The first portion of the bottom electrode layer composed of the metal region and the second portion of the bottom electrode layer composed of the metal-oxide region form the segmented bottom electrode.

Magneto-resistive random access memory with segmented bottom electrode

A magnetic tunnel junction pillar is positioned above a bottom electrode composed of a metal-oxide region in contact with a first portion of the magnetic tunnel junction pillar and a metal region surrounding the metal-oxide region. A sidewall spacer is positioned along sidewalls of the magnetic tunnel junction pillar, and the metal region is in contact with a bottom surface of the sidewall spacer and a second portion of the magnetic tunnel junction pillar.

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Troy, NY, United States of America

Willie Lester Muchrison, Jr