Sri International

Winbond Electronics Corporation

Other

USA As Represented by Secretary of the Navy

Industrial Technology Research Institute

The United States of America As Represented by the Secretary of

Stanford Research Institute

William W Lee

Edward W Grange

J Martin Brown

Abelardo P Martinez

Daniel J Pollart

Michael Tracy

David W Henry

Mark G Parent

Thomas H Smith

Allan N Fujiwara

Michael J Cory

An electromagnetic vector sensor (EMVS) system, having a plurality of EMVS devices consisting of a plurality of loop antenna elements spatially orthogonally integrated with and electrically isolated from a plurality of dipole antenna elements, mounted on a rotatably adjustable platform having a true north orientation, including active circuitry residing in antenna housings, and external executing software programs causing the active circuitry in cooperation with the EMVS device and receivers to determine angle of arrival and resolution of incoming wave vectors and polarization of incoming signals and to perform accurate high frequency geolocation signal processing; the programs which perform calibration and antenna element placement determination operations, also cause the system to collect data of known transmitted high frequency skywave signals, and estimate direction of arrival of unknown signals by detecting, resolving and measuring components of an electric field and a magnetic field at a single point.

Electromagnetic vector sensor (EMVS)

An electromagnetic vector sensor (EMVS) system, having a plurality of EMVS devices consisting of a plurality of loop antenna elements spatiatally orthogonally integrated with and electrically isolated from a plurality of dipole antenna elements, mounted on a rotatably adjustable platform having a true north orientation, including active circuitry residing in antenna housings, and external executing software programs causing the active circuitry in cooperation with the EMVS device and receivers to determine angle of arrival and resolution of incoming wave vectors and polarization of incoming signals and to perform accurate high frequency geolocation signal processing; the programs which perform calibration and antenna element placement determination operations, also cause the system to collect data of known transmitted high frequency skywave signals, and estimate direction of arrival of unknown signals by detecting, resolving and measuring components of an electric field and a magnetic field at a single point.

Electromagnetic vector sensors (EMVS) apparatus method and system

A method of using 1,2,4-benzotriazine oxides, some of which are novel compounds, as radiosensitizers and selective cytotoxic agents is disclosed. These compounds are shown to specifically radiosensitize hypoxic tumor cells. Some are additionally disclosed to be useful as specific cytotoxic agents for these cells. They also show an unexpected ability to radiosensitize aerobic cells following or preceding a hypoxic incubation of the cells with the drug. This provides a basis for selective radiosensitization of tumors compared to normal cells. A novel method for preparing the 1,2,4-benzotriazine oxides is also disclosed.

1,2,4-Benzotriazine oxides as radiosensitizers and selective cytotoxic agents

A method of using 1,2,4-benzotriazine oxides, some of which are novel compounds, as radiosensitizers and selective cytotoxic agents is disclosed. These compounds are shown to specifically radiosensitive hypoxic tumor cells. Some are additionally disclosed to be useful as specific cytotoxic agents for these cells. They also show an unexpected ability to radiosensitize aerobic cells following or preceding a hypoxic incubation of the cells with the drug. This provides a basis for selective radiosensitization of tumors compared to normal cells. A novel method for preparing the 1,2,4-benzotriazine oxides is also disclosed.

1, 2, 4-benzotriazine oxides as radiosensitizers and selective cytotoxic agents

A compact, low current flash EPROM cell that is scaleable to dee-submicron levels for future generations of flash memory arrays is disclosed. This flash memory cell can be fabricated using a twelve masks, triple-poly, salicided process. Source-side injection for programming and poly-to-poly erasing demand very little current and power and such demand can easily be met by charge pump techniques. A select gate in series with the cell channel guarantees enhancement threshold and its sell-alignment and constant channel length will give uniform electrical characteristics in every respect. A virtual ground array fabricated using a self-aligned salicidation process provides a compact cell with high access speed. The cell area is approximately 3F.times.2F where F is a given minimum dimension.

Method of fabricating virtual ground SSI flash EPROM cell and array

For multiple layer interconnections using copper, the top interconnection layer and the via hole to the bottom layer are self-aligned on at least one side. The self-alignment eliminates the need for providing a border for the contact of the via hole to the interconnection. The self-alignment is accomplished by using a nitride mask, which defines one side of both the via hole and the interconnection. After the top surface of the copper interconnection is planarized, another layer of copper interconnection can be superimposed over the first interconnection in a similar manner.

Borderless contacts for dual-damascene interconnect process

A semiconductor wafer is planarized by first mapping the flatness profile and then etching the wafer according to the flatness profile. Mapping is accomplished by scanning the wafer with a light beam. The flatness information is obtained by a phase detector comparing the phase of the reflected light beam and a reference light, and is then stored in a memory. The etching is implemented with scanning chemical ion beam etching, in which a reactive gas etches the wafer from spot to spot according to the instantaneous volume of reacting gas or the potential at the wafer, and is controlled by the data stored in the memory. The method can be used to planarize both semiconductor and metal.

Global planarization method using plasma etching

A method for making air-insulated planar metal interconnections having low interlevel capacitance with improved RC time delays for integrated circuits is achieved. The method involves using a multilayer of negative and positive photoresists in which open regions are developed in the negative photoresist for the metal interconnections, and open regions are developed in the positive photoresist for via holes. The open regions are then filled with a Ti/TiN diffusion barrier deposited at room temperature and an electroless plated copper, and polished back using a Dual Damazene to form the interconnecting metal level and the via hole stud. The method is repeated several times to form multilevel metal interconnections. The remaining photoresist is then totally removed by oxygen ashing to leave a free-standing multilevel metal interconnection structure that is conformally coated with a thin Al.sub.2 O.sub.3 passivation layer and having air insulation. This results in a much lower inter- and intralevel capacitance and improved circuit performance.

Method for fabricating air-insulated multilevel metal interconnections

A method of programming a flash memory device. The method includes a step of applying a voltage that is less than a threshold voltage to a select gate of a flash memory device. Electrons are transferred from a source/drain region or preferably the source region through a region underlying the select gate to a channel region underlying a floating gate. The transferring step occurs using an electron gradient from a higher concentration region in the source region to a lower concentration region in the channel region. By way of a selected voltage applied to a control gate, one of a plurality of selected voltage levels are applied to the floating gate.

Method for programming a flash memory

1,2,4-benzotriazine oxides as radiosensitizers and selective cytotoxic

A method of using 1,2,4-benzotriazine oxides, some of which are novel compounds, as radiosentitizers and selective cytotoxic agents is disclosed. These compounds are shown to specifically radiosensitize hypoxic tumor cells. Some are additionally disclosed to be useful as specific cytotoxic agents for these cells. They also show an unexpected ability to radiosensitize aerobic cells following or preceding a hypoxic incubation of the cells with the drug. This provides a basis for selective radiosensitization of tumors compared to normal cells. A novel method for preparing the 1,2,4- benzotriazine oxides is also disclosed.

A method of using 1,2,4-benzotriazine oxides, some of which are novel compounds, as radiosensitizers and selective cytotoxic agents is disclosed. These compounds are shown to specifically radiosensitize hypoxic tumor cells. Some are additionally disclosed no be useful as specific cytotoxic agents for these cells. They also show an unexpected ability to radiosensitize aerobic cells following or preceding a hypoxic incubation of the cells with the drug. This provides a basis for selective radiosensitization of tumors compared to normal cells. A novel method for preparing the 1,2,4-benzotriazine oxides is also disclosed.

A method for radiosensitizing hypoxic tumor cells in a warm-blooded animal is provided. The method involves administration of a nicotinamide compound having the structural formula ##STR1## wherein X is O or S, and Z is H, OR, SR or NHR where R is as defined herein. Exemplary compounds for use in conjunction with the disclosed method include: 5-hydroxynicotinamide; 5-hydroxynicotinamide, sodium salt; 5-(2,3-dihydroxypropoxy)nicotinamide; 5-aminonicotinamide; 5-(2-methoxyethylamino)nicotinamide; and 5-acetamidonicotinamide.

Benzamide and nicotinamide radiosensitizers

Process for preparing 1,2,4-benzotriazine oxides

A method for sensitizing hypoxic tumor cells to radiation using derivatives of benzamide are disclosed. Some of the compounds useful in the method of the invention are novel.

Growing community of inventors

Palo Alto, CA, United States of America

William W Lee