Raytheon Company

Semtech Corporation

Hughes Electronics Corporation

Sierra Monolithics, Inc.

William W Chen

Binneg Y Lao

Norman H Harris

Thomas K Dougherty

Brian M Pierce

David A Rowe

Stephen A Gabelich

Florentino V Lee

Inho Kim

A chip assembly includes a chip, a paddle, an interface layer, a frequency extending device, and lands. The chip has contacts. The interface layer is disposed between the chip and the paddle. The frequency extending device has at least a conductive layer and a dielectric layer. The conductive layer has conductive traces. The frequency extending device is disposed adjacent to the side of the chip and overlying the paddle. The lands are disposed adjacent to the side of the paddle. The contacts are connected to the conductive traces. The conductive traces are connected to the lands. The frequency extending device is configured to reduce impedance discontinuity such that the impedance discontinuity produced by the frequency extending device is less than an impedance discontinuity that would be produced by bond wires each having a length greater than or substantially equal to the distance between the contacts and the lands.

Chip assembly with frequency extending device

Apparatus and method for a chip assembly including a frequency extending device

Methods and apparatus for providing connection packages for high-speed integrated circuits (&ldquo;ICs&rdquo;) in optical, electronic, wired or wireless communications are disclosed. The connection package achieves dimensional transformation of signal routes from high-speed, high-density IC's input/output pads to the external terminals such as coaxial terminals and BGA balls, while maintaining constant characteristic impedance throughout the transmission lines. A package may include a substrate having microstrips for communicating signals between the IC pads and external terminals. A pair of differential microstrips can be positioned closer to each other near the IC pads and create capacitive coupling. Such coupled capacitance allows the width of the microstrips to be reduced. A portion of the coupled microstrips near the IC pads can be widened to increase the capacitance so that the overall transmission path can become an all-pass network&mdash;from the IC pads, through the bonding wires, to the microstrips. The rest of the portions of the microstrips can be tapered out to their respective external connectors. In addition, a multi-layer package may include a substrate, at least one coaxial external terminal formed at the side of the package for conducting a high-speed signal, BGA connectors formed at the bottom of the package for conducting low-speed signals, a microstrip for connecting the high-speed signal to the coaxial terminal, and microstrips and internal coaxial connectors for connecting the low-speed signals to the BGA connectors. Substantially constant characteristic impedance is achieved throughout the signal transmission paths in the package.

Single and multiple layer packaging of high-speed/high-density ICs

An erosion-resistant, chemically vapor-deposited zinc sulfide window and method of making the same are disclosed. The method includes the step of immersing a chemically vapor-deposited or a hot isostatic pressed, chemically vapor-deposited zinc sulfide body into a liquid comprising gallium, the liquid having a temperature of about 600.degree. C. to about 1000.degree. C., for at least about thirty minutes to form a gallium-doped body. The gallium-doped, chemically vapor-deposited zinc sulfide body according to the invention is one capable of transmitting light having a wavelength in the range of about 300 nanometers to about 15,000 nanometers. Furthermore, the gallium-doped, chemically vapor-deposited zinc sulfide window according to the invention is capable of transmitting light, having a wavelength in the range of about 380 nanometers to about 700 nanometers have been exposed to rain erosion for 20 minutes at 470 miles per hour with a 90.degree. incidence angle, with at least about 150% more efficiency than a non-doped, chemically vapor-deposited zinc sulfide window.

Method of treating a zinc sulfide body formed by chemical vapor

A large, monolithic sapphire structure for use in mid-IR military applications, such as, for example, a window or screen for radar detection equipment. The structure is made by bonding together two or more smaller sapphire panes by a method including the steps of coating a surface of each of the panes with a magnesia vapor and contacting the magnesia-coated surfaces with each other in the presence of a hydrogen-containing gas at a temperature (e.g., about 1500.degree. C. and 2000.degree. C.) and for a time period (e.g., about 45 minutes to about ten hours) sufficient to form a continuous magnesia-alumina spinel interlayer bond between the panes.

Bonded sapphire, and method of making same

Methods of fabricating a porous ceramic composite having voltage-variable dielectric properties. The composite is made as follows. A polycrystalline ferroelectric powder, which is a ferroelectric perovskite such as barium strontium titanate, for example, is provided. The powder, a binder and a filler are then mixed in water to form a slurry. The powder-binder-filler slurry is then dried. The dried powder-binder-filler slurry is granulated. The granulated powder-binder-filler is pressed into a die. The binder and filler are then burned out to form a fragile porous ash-like structure. The porous structure is then sintered to form porous ceramic parts. The porous ceramic parts are then machined tiles. The machined porous tiles may then be tested for microwave properties. Fabrication methods for producing porous ferroelectric ceramic-polymer composite tiles or subaperture blanks and continuous transverse stub electronically scanned antenna plates or subapertures are also disclosed.

Methods of fabricating continuous transverse stub radiating structures

Single crystal sapphire is conventionally employed for mid-wave IR windows and domes exposed to high aerodynamic heating environments. Single crystal sapphire, however, suffers a loss of compressive strength in the c-axis of 95% on heating from ambient to 800.degree. C. This loss of compressive strength on heating results in poor thermal shock resistance. Poor thermal shock resistance jeopardizes the reliability of the windows and domes. The process of the present invention strengthens sapphire and improves its resistance to thermal shock by introducing magnesium (Mg) ions into the crystal lattice of sapphire to form a solid solution. The solid solution increases the strength of the sapphire. Additionally, a larger increase in strength results from converting the Mg into second phase precipitates comprising magnesium aluminate spinel. The formation of the second phase particulates results in precipitation-hardening or precipitation-strengthening due to the volume change on forming the magnesium aluminate spinel. The second phase particulates comprising magnesium aluminate spinel are held to such a small size that the second phase particulates impart increased fracture strength while not significantly degrading the IR transmission when compared with untreated sapphire. Consequently, precipitation-hardening with magnesium aluminate spinel improves the compressive strength of sapphire while retaining high thermal conductivity and IR transmission.

Growing community of inventors

Westchester, CA, United States of America

William W Chen