International Business Machines Corporation

Infineon Technologies Ag

William Thomas Motsiff

Timothy Harrison Daubenspeck

Robert Michael Geffken

Anthony K Stamper

Jeffrey P Gambino

Christopher David Muzzy

Richard Quimby Williams

Edward Crandal Cooney, Iii

Thomas L McDevitt

William A Klaasen

Jed Hickory Rankin

Rosemary A Previti-Kelly

William R Tonti

Steven H Voldman

Wilbur David Pricer

Ronald R Uttecht

Jean E Wynne

Wolfgang Sauter

Baozhen Li

Timothy Dooling Sullivan

Andrew Herbert Simon

Tom C Lee

Stephen Ellinwood Luce

Carlos Juan Sambucetti

Michael Wayne Lane

David Hirsch Danovitch

Kimball M Watson

Guy Paul Brouillette

Kurt R Kimmel

Gerald Matusiewicz

Dinesh A Badami

Michael Liehr

Dennis P Bouldin

Edward J Nowak

Daniel C Edelstein

Peter Alfred Gruber

Vincent James McGahay

William F Clark, Jr

Wayne John Howell

Howard Smith Landis

Christy Sensenich Tyberg

Ephrem G Gebreselasie

Daniel George Berger

Henry Atkinson Nye, Iii

David C Thomas

Timothy G Dunham

Ronald Lee Mendelson

Adolf E Wirsing

Richard A Gilmour

Mark P Murray

Douglas S Armbrust

Jennifer C Robbins

Mark J Pouliot

Amanda L Piper

Wadgi W Abadeer

Herbert Carl Cook

J Alex Chediak

Bruce Lee Humphrey

Elizabeth T Webster

Paul A Farrar

Michael Jay Shapiro

Ravi F Saraf

Harold G Linde

Erick G Walton

Judith Marie Roldan

Sylvain E Ouimet

Andy Cowley

Gerald R Friese

Mohammed Fazil Fayaz

Sally J Yankee

W David Pricer

Jean-Guy Quintal

Paul Alden Farrar, Sr

Michael W MacIntyre

A structure includes a substrate. A trench structure is arranged within the substrate. A film is placed under an interlevel dielectric pad and between portions of the trench structure.

Product and method for integration of deep trench mesh and structures under a bond pad

A method for programming a laser fuse. The laser fuse has a fuse link including a material having a characteristic of changing its electrical resistance after being exposed to a laser beam. The laser beam is directed to the fuse link, the laser beam being controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off.

Programming of laser fuse

A structure and method for providing an antifuse which is closed by laser energy with an electrostatic assist. Two or more metal segments are formed over a semiconductor structure with an air gap or a porous dielectric between the metal segments. Pulsed laser energy is applied to one or more of the metal segments while a voltage potential is applied between the metal segments to create an electrostatic field. The pulsed laser energy softens the metal segment, and the electrostatic field causes the metal segments to move into contact with each other. The electrostatic field reduces the amount of laser energy which must be applied to the semiconductor structure to close the antifuse.

Antifuse structure and system for closing thereof

Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.

Dual damascene interconnect structures having different materials for line and via conductors

A crack stop for low K dielectric materials of an integrated circuit (IC) formed on an IC chip using metal interconnects which do not form a self-passivating oxide layer, such as copper or silver interconnects, in a low-K dielectric material to prevent damage to the active area of the IC chip caused by chipping and cracking formed along peripheral edges of the IC chip during a dicing operation. A moisture barrier or edge seal is formed as a metal stack positioned along the outer peripheral edges of the active area of the IC chip. The crack stop is formed by at least one trench or groove positioned outside of the moisture barrier/edge seal on the outer periphery of the IC chip.

Crack stop for low K dielectrics

A method of integrating circuit components under bond pads includes establishing a trench border on a circuit element and synthesizing a set of trench mesh edges of a trench mesh to be coincident with the trench border on the circuit element. The method further includes eliminating a trench mesh contained within the trench border of the trench circuit element.

A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

Structure and programming of laser fuse

An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect adjacent a second interconnect on an interconnect level, spacers formed along adjacent sides of the first and second interconnects, and an air gap formed between the first and second interconnects. The air gap extends above an upper surface of at least one of the first and second interconnects and below a lower surface of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.

Adjustable self-aligned air gap dielectric for low capacitance wiring

A method for manufacturing high performance copper inductors includes providing a tall, Cu laminate spiral inductor is formed at the last metal level, and at the last metal +1 level, with the metal levels being interconnected by a bar via having the same spiral shape as the spiral metal inductors at the last metal level and the last metal +1 level. The method includes integrating the formation of thick inductors with the formation of bond pads, terminals and interconnect wiring with the last metal +1 wiring. Included are dielectric deposition and spacer formation steps, and/or selective deposition of a passivating metal such as CoWP, to passivate a Cu inductor that is formed after the last metal layer.

Method of manufacturing high performance copper inductors with bond pads

Method of closing an antifuse using laser energy

A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

A method for selectively altering dielectric properties of a semi-conductor device. In an exemplary embodiment, the method includes applying energy to a local region of interest, the local region of interest including a thermally alterable dielectric such that said heating caused by the applied energy causes a dielectric constant of the thermally alterable dielectric to change.

Method and apparatus for selectively altering dielectric properties of localized semiconductor device regions

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Essex Junction, VT, United States of America

William Thomas Motsiff