Ring Technology Enterprises, LLC

University of California

Ring Technology Enterprises of Texas, LLC

The University of Texas System

Leland Stanford Junior University

Duke University

Mcnc

Parallel Iron LLC

Ring Technology Enterprises Os Texas, LLC

William Thomas Lynch

David James Herbison

Steven Louis Dodd

Kang L Wang

Martin O Tanner

Sanjay K Banerjee

Gary Elder McGuire

Thomas W Sigmon

Emi Ishida

Teh Y Tan

Suryanarayana Bhattacharya

A storage system that may include one or more memory sections, one or more switches, and a management system. The memory sections include memory devices and a section controller capable of detecting faults with the memory section and transmitting messages to the management system regarding detected faults. The storage system may include a management system capable of receiving fault messages from the section controllers and removing from service the faulty memory sections. Additionally, the management system may determine routing algorithms for the one or more switches.

Methods and systems for a storage system

A storage system that may include one or more memory devices, a memory interface device corresponding to one or more of the memory devices, which are organized in sections, and a section controller. In this system, a data request for the data may be received over a communications path by a section controller. The section controller determines the addresses in the memory devices storing the requested data, transfers these addresses to those memory devices storing the requested data, and transfers an identifier to the memory interface device. The memory device, in response, reads the data and transfers the data to its corresponding memory interface device. The memory interface device then adds to the data the identifier it received from the section controller and forwards the requested bits towards their destination, such that the data need not pass through the section controller.

Methods and systems for a memory section

A memory access scheme employing one or more sets of shift registers interconnected in series to which data may be loaded from or written into one or more memory devices. That is, data from the memory devices may be parallel loaded into the sets of shift registers and then serially shifted through the shift registers until it is output from the sets of shift registers and transferred to its destination. Additionally, the data may be read from and loaded into the memory devices to/from the sets of shift registers such that the shifting of the shift registers is uninterrupted during the reading and/or loading of data. Additionally, data from the memory devices may be loaded into two or more parallel chains of shift registers and then serially shifted through the shift register chains.

Methods and apparatus for improved memory access

Methods and systems for an identifier-based memory section

A storage system that may include one or more memory devices, a memory interface device corresponding to one or more of the memory devices, which are organized in sections, a section controller, and a switch. The switch is capable of reading a data request including a data block identifier and routing the data request and any associated data through the switch on the basis of this data block identifier, such that a data request may be routed to a memory section. The section controller, in response, determines the addresses in the memory devices storing the requested data, and it transfers these addresses to those memory devices storing the requested data.

Methods and systems for a storage system with a program-controlled switch for routing data

A storage system that may include one or more memory sections, one or more switches, and a management system. The memory sections include memory devices and a section controller capable of detecting faults with the memory section and transmitting messages to the management system regarding detected faults. The storage system may include a management system capable of receiving fault messages from the section controllers and removing from, service the faulty memory sections. Additionally, the management system may determine routing algorithms for the one or more switches.

A quantum bridge structure including wires of a semiconductor material such as silicon which are formed by selectively etching a superlattice of alternating layers of at least two semiconductor materials. The quantum bridge is useful as a photo emission device, a photo detector device, and a chemical sensor. The wires exhibit improved electrical conduction properties due to decreased Coulomb scattering.

Method of fabricating quantum bridges by selective etching of

Quantum bridges fabricated by selective etching of superlattice

A method of forming a metal-disilicide (MSi.sub.2) film from a silicon-on-insulator (SOI) substrate having an insulating underlayer and a silicon outerlayer includes the formation of a first capping layer on a portion of the silicon outerlayer. The first capping layer preferably includes titanium and a preselected metal (M) such as cobalt. A step is then performed to convert a first portion of the silicon outerlayer to metal-disilicide. This step is preferably accomplished by a rapid thermal annealing step. Thereafter, a second capping layer is formed on the metal-disilicide layer. The second capping layer preferably includes titanium and metal-monosilicide (MSi). Next, a step is performed to convert a second portion of the silicon outerlayer, beneath the first portion, to metal-disilicide while preventing phase-reversal of the already formed metal-disilicide layer to metal-monosilicide. This step is preferably accomplished by a rapid thermal annealing step as well. The method can preferably be used to form low resistance metal-disilicide contacts to active regions of SOI electronic devices.

Method of forming metal-disilicide layers and contacts

A MOSFET device for ULSI circuits includes a semiconductor body having first and second spaced doped regions of a first conductivity type which function as source and drain regions, a third doped region between the first and second regions of a second conductivity type, and a first intrinsic region between the third doped region and the drain region, a channel of said MOSFET device including the third doped region and said first intrinsic region. Preferably the device further includes a second intrinsic region between the third doped region and the source region, the channel region of the MOSFET device including the third doped region, the first intrinsic region, and the second intrinsic region. The device further includes an insulating layer over the channel region and a gate electrode formed on the insulating layer over the channel region. A source electrode contact, the first doped region, and a drain electrode contact the second doped region. Several processes are described for fabricating the device.

P-I-N MOSFET for ULSI applications

Shallow regions are formed in a semiconductor body by irradiating the surface region with a pulsed laser beam in an atmosphere including the dopant. The pulsed laser beam has sufficient intensity to drive in dopant atoms from the atmosphere but insufficient intensity to melt the semiconductor material. A silicide layer can be placed over the surface of the semiconductor material prior to irradiation with the dopant being driven from the atmosphere through the silicide into the surface region of the semiconductor body. Alternatively, the silicide layer can include dopant atoms prior to irradiating the surface region.

Growing community of inventors

Apex, NC, United States of America

William Thomas Lynch