Signetics

William T Stacy

Sheldon C Lim

Teh-Yi J Chen

Albert Schmitz

Anjan Bhattacharyya

Charles J Vorst

Kevin G Jew

A forkliftable drum for the transportation and storage of materials is disclosed herein. The drum is comprised of a top ring having a series of forklift pockets arranged around the circumference to allow lifting and transporting of the drum by a forklift. Two or more drums may be connected by means of straps or threaded fasteners to create a bundle which can be transported without pallets. Drums of varying capacities may be provided which have the same diameter, allowing different capacity drums to be integrated into a single bundle.

Forkliftable steel drum

In an improved method for growing an oxide layer on a silicon surface of a semiconductor body, the semiconductor body is first provided with a silicon surface. A first oxide layer portion is then grown over the silicon surface in a first thermal oxidation process at a temperature of less than about 1000.degree. C. The semiconductor device is then annealed in a nonoxidizing ambient at a temperature above about 1000.degree. C., and finally a second oxide layer portion is then grown over the first oxide layer portion in a second thermal oxidation process to complete the growth of the oxide layer. The silicon surface may be of either polycrystalline or monocrystalline material. This method avoids both the dopant outdiffusion problems associated with present high-temperature oxidation processes and the stress-related irregularities associated with known low-temperature oxidation processes.

Method for growing an oxide layer on a silicon surface

In fabricating a PROM cell, an electrical isolation mechanism (44 and 32) is formed in a semiconductive body to separate islands of an upper zone (36) of first type conductivity (N) in the body. A semiconductor is introduced into one of the islands to produce a region (48) of opposite type conductivity (P) that forms a PN junction with adjacent semiconductive material of the island. Ions are implanted to convert a surface layer (60) of the region into a highly resistive amorphous form which is irreversibly switchable to a low resistance state. A path of first type conductivity extending from the PN junction through another of the islands to its upper surface is created in the body to complete the basic cell.

Growing community of inventors

San Jose, CA, United States of America

William T Stacy