Intel Corporation

William T Blanton

Martin Weiss

Tahir Ghani

Biswajeet Guha

Charles Henry Wallace

Leonard P Guler

William Hsu

Ming-Chuan Yang

Michael Harper

David Fryer

Apratim Dhar

Stefan Dickert

Brian Kinnear

Telly Koffas

James F Bondi

John H Irby, Iv

Benedict A Samuel

Gate-all-around integrated circuit structures having adjacent island structures are described. For example, an integrated circuit structure includes a semiconductor island on a semiconductor substrate. A first vertical arrangement of horizontal nanowires is above a first fin protruding from the semiconductor substrate. A channel region of the first vertical arrangement of horizontal nanowires is electrically isolated from the fin. A second vertical arrangement of horizontal nanowires is above a second fin protruding from the semiconductor substrate. A channel region of the second vertical arrangement of horizontal nanowires is electrically isolated from the second fin. The semiconductor island is between the first vertical arrangement of horizontal nanowires and the second vertical arrangement of horizontal nanowires.

Fabrication of gate-all-around integrated circuit structures having adjacent island structures

In one embodiment, a wafer alignment system, comprises a radiation source to generate radiation, a radiation directing assembly to direct at least a portion of the radiation onto a surface of a wafer, the radiation having a polarization state, an optical analyzer to collect at least a portion of the radiation reflected from the wafer, the wafer including at least a first region having a first grating pattern oriented in a first direction and at least a second region having a second grating pattern oriented in a second direction, different from the first direction.

Wafer level alignment structures using subwavelength grating polarizers

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Hillsboro, OR, United States of America

William T Blanton